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Si Heterojunction Bipolar Transistors with Single‐Crystalline β ‐ SiC Emitters

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type , Journal 01 Oct 1987 Japan Publisher:The Electrochemical SocietyJournal:Journal of The Electrochemical Society, volume 134, pages 2,545-2,549 (issn: 0013-4651, eissn: 1945-7111,

Authors: Toshihiro Sugii; Takashi Ito; Yuji Furumura; Makoto Doki; Fumio Mieno; Mamoru Maeda;

doi: 10.1149/1.2100240 , 10.1002/chin.198805366

Si Heterojunction Bipolar Transistors with Single‐Crystalline β ‐ SiC Emitters

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Abstract

AbstractThe electrical characteristics of β‐SiC are investigated and discussed in terms of the applicability to heterojunction bipolar transistors (HBT).

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Energy Research