In this work, metal-oxide-semiconductor (MOS) capacitors incor-porating D2O-radical annealed atomic-layer-deposition (ALD) HfO2 gate dielectric were fabricated and investigated. The thermo-chemical breakdown model (E model) is used to analyze the TDDB characteristics for lifetime projection. TDDB data shows that Weibull slope (β) is increased with increasingly stress tem-perature. This may come from the temperature sensitive defects and possible redistribution in dielectric. Meanwhile, the Weibull slope is independent of the stress voltage. Based on the TDDB data, the activation energy (Ea), active dipole-moment (p0) electric-field acceleration factor (γ) and electric field at 10 years lifetime (E10years) of the D2O-radical annealed ALD HfO2 thin films were obtained.