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Bi-stable resistive switching characteristics in Ti-doped ZnO thin films

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type , Journal 04 Apr 2013 Australia Publisher:Springer Science and Business Media LLCJournal:Nanoscale Research Letters, volume 8 (eissn: 1556-276X,

Copyright policy )Funded by:ARC | Interface engineering of ..., ARC | Development of advanced m..., ARC | Development of High Perfo... +1 projects

Authors: Younis, A; Chu, D; Li, SS;

doi: 10.1186/1556-276x-8-154

pmid: 23557254

pmc: PMC3623890

handle: 1959.4/unsworks_35720

Bi-stable resistive switching characteristics in Ti-doped ZnO thin films

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Abstract

Abstract Ti-doped ZnO (ZnO/Ti) thin films were grown on indium tin oxide substrates by a facile electrodeposition route. The morphology, crystal structure and resistive switching properties were examined, respectively. The morphology reveals that grains are composed of small crystals. The (002) preferential growth along c-axis of ZnO/Ti could be observed from structural analysis. The XPS study shows the presence of oxygen vacancies in the prepared films. Typical bipolar and reversible resistance switching effects were observed. High R OFF/R ON ratios (approximately 14) and low operation voltages within 100 switching cycles are obtained. The filament theory and the interface effect are suggested to be responsible for the resistive switching phenomenon.

Country

Australia

Related Organizations

UNSW Sydney
Australia

Keywords

anzsrc-for: 4016 Materials Engineering, anzsrc-for: 0912 Materials Engineering, Nano Express, anzsrc-for: 4018 Nanotechnology, Condensed Matter Physics, anzsrc-for: 1007 Nanotechnology, 530, 4016 Materials Engineering, 620, anzsrc-for: 40 Engineering, anzsrc-for: 0204 Condensed Matter Physics, Materials Science(all), anzsrc-for: 5104 Condensed matter physics, 4018 Nanotechnology, 40 Engineering

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