Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition
Copyright policy )Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition
Abstract Metal oxide nanosheets have potential applications in novel nanoelectronics as nanocrystal building blocks. In this work, the devices with a structure of Au/p-type Co3O4 nanosheets/indium tin oxide/glass having bipolar resistive switching characteristics were successfully fabricated. The experimental results demonstrate that the device have stable high/low resistance ratio that is greater than 25, endurance performance more than 200 cycles, and data retention more than 10,000 s. Such a superior performance of the as-fabricated device could be explained by the bulk film and Co3O4/indium tin oxide glass substrate interface effect.
- UNSW Sydney Australia
anzsrc-for: 4016 Materials Engineering, anzsrc-for: 0912 Materials Engineering, Nano Express, anzsrc-for: 4018 Nanotechnology, 540, Condensed Matter Physics, anzsrc-for: 1007 Nanotechnology, 4016 Materials Engineering, anzsrc-for: 40 Engineering, anzsrc-for: 0204 Condensed Matter Physics, Materials Science(all), anzsrc-for: 5104 Condensed matter physics, 40 Engineering
anzsrc-for: 4016 Materials Engineering, anzsrc-for: 0912 Materials Engineering, Nano Express, anzsrc-for: 4018 Nanotechnology, 540, Condensed Matter Physics, anzsrc-for: 1007 Nanotechnology, 4016 Materials Engineering, anzsrc-for: 40 Engineering, anzsrc-for: 0204 Condensed Matter Physics, Materials Science(all), anzsrc-for: 5104 Condensed matter physics, 40 Engineering
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