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Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

descriptionPublicationkeyboard_double_arrow_right Article , Other literature type 02 Dec 2021 Italy Publisher:MDPI AGJournal:Energies, volume 14, page 8,055 (eissn: 1996-1073,

Authors: Borghese A.; Costanzo A. D.; Riccio M.; Maresca L.; Breglio G.; Irace A.;

doi: 10.3390/en14238055

handle: 11588/906183

Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

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Abstract

In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of devices. Successively, the possibility of using the gate current as a temperature-sensitive parameter and its monitoring during real circuit operation is proposed. The viability of monitoring the gate current without introducing additional complexity in the gate driver is examined through experimental measurements on commercially available p-GaN HEMTs.

Country

Italy

Related Organizations

University Federico II of Naples
Italy
National Institute for Nuclear Physics
Italy

Keywords

Gate driver, Boost converter; GaN; Gate driver; HEMT; Ohmic contact; P-GaN gate; Schottky contact; Short circuit; TSEP, Technology, Control and Optimization, Schottky contact, Renewable Energy, Sustainability and the Environment, Boost converter, T, Energy Engineering and Power Technology, Short circuit, TSEP, Ohmic contact, P-GaN gate, GaN, GaN; HEMT; gate driver; p-GaN gate; TSEP; Schottky contact; Ohmic contact; short circuit; boost converter, Electrical and Electronic Engineering, p-GaN gate, Engineering (miscellaneous), HEMT, Energy (miscellaneous), gate driver

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	citations This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	8
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	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Top 10%
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Top 10%