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Performance Improvement of Vertical Channel Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Porous MXene Electrode

doi: 10.3390/en18092331
The surface morphology of porous source electrodes plays a significant role in the performance of vertical channel indium–gallium–zinc oxide thin-film transistors (VC-IGZO-TFTs). This study systematically investigates the properties of porous MXene-based source electrodes and their impact on VC-IGZO-TFTs fabricated with varying MXene concentrations. As the MXene concentration increases, both the sheet resistance and porosity of the electrodes decrease. VC-IGZO-TFTs based on a 3.0 mg/mL MXene concentration exhibit optimal electrical performance, with a threshold voltage (Vth) of 0.16 V, a subthreshold swing (SS) of 0.20 V/decade, and an on/off current ratio (Ion/Ioff) of 4.90 × 105. Meanwhile, the VC-IGZO-TFTs exhibit excellent electrical reliability and mechanical stability. This work provides a way to analyze the influence of sheet resistance and porosity on the performance of VC-IGZO-TFTs, offering a viable approach for enhancing device efficiency through porous MXene electrode engineering.
Technology, porous source electrode, flexible devices, T, IGZO, vertical channel TFT, MXene
Technology, porous source electrode, flexible devices, T, IGZO, vertical channel TFT, MXene
