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Band Gap of Pb(Fe0.5Nb0.5)O3 Thin Films Prepared by Pulsed Laser Deposition

descriptionPublicationkeyboard_double_arrow_right Article , Conference object , Other literature type , Journal 12 Nov 2021 Germany Publisher:MDPI AGJournal:Materials, volume 14, page 6,841 (eissn: 1996-1944,

Authors: Nicole Bartek; Vladimir V. Shvartsman; Houssny Bouyanfif; Alexander Schmitz; Gerd Bacher; Selina Olthof; Svetlana Sirotinskaya; +2 Authors

doi: 10.3390/ma14226841

pmid: 34832243

pmc: PMC8625491

Band Gap of Pb(Fe0.5Nb0.5)O3 Thin Films Prepared by Pulsed Laser Deposition

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Abstract

Ferroelectric materials have gained high interest for photovoltaic applications due to their open-circuit voltage not being limited to the band gap of the material. In the past, different lead-based ferroelectric perovskite thin films such as Pb(Zr,Ti)O3 (Pb,La)(Zr,Ti)O3 and PbTiO3 were investigated with respect to their photovoltaic efficiency. Nevertheless, due to their high band gaps they only absorb photons in the UV spectral range. The well-known ferroelectric PbFe0.5Nb0.5O3 (PFN), which is in a structure similar to the other three, has not been considered as a possible candidate until now. We found that the band gap of PFN is around 2.75 eV and that the conductivity can be increased from 23 S/µm to 35 S/µm during illumination. The relatively low band gap value makes PFN a promising candidate as an absorber material.

Country

Germany

Related Organizations

University of Cologne
Germany
University of Duisburg-Essen
Germany
University of Picardie Jules Verne
France
University of Picardie Jules Verne
France

Keywords

ddc:620, optical properties, Technology, 530, lead iron niobate, Article, lead iron niobate -- thin films -- pulsed laser deposition -- band gap -- optical properties -- photovoltaics, Fakultät für Ingenieurwissenschaften » Bauwissenschaften » Bauingenieurwesen » Materialwissenschaft, Forschungszentren » Center for Nanointegration Duisburg-Essen (CENIDE), band gap, Fakultät für Ingenieurwissenschaften » Elektrotechnik und Informationstechnik » Nanostrukturtechnik, pulsed laser deposition, Bauwissenschaften, Elektrotechnik, Microscopy, QC120-168.85, T, QH201-278.5, 500, ddc:no, Engineering (General). Civil engineering (General), 620, TK1-9971, photovoltaics, thin films, Descriptive and experimental mechanics, Electrical engineering. Electronics. Nuclear engineering, TA1-2040, ScholarlyArticle, ddc: ddc:620

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