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Mapping of Oxygen-Related Defects in Silicon for High Efficiency Solar Cells: Application to the Prediction of LID Losses

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2013 English Publisher:WIP

Authors: J.-C. Helleboid; Nicolas Enjalbert; R. Peyronnet; Sébastien Dubois; F. Tanay; Jordi Veirman;

doi: 10.4229/28theupvsec2013-2co.1.6

Mapping of Oxygen-Related Defects in Silicon for High Efficiency Solar Cells: Application to the Prediction of LID Losses

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Abstract

This study focuses on the mapping of oxygen-related defects in industrial monocrystalline silicon wafers. All mappings were obtained solely from resistivity measurements and specific furnace anneals. An emphasis is given on the boron-oxygen complex responsible for the light-induced degradation (LID) of the carrier lifetime in boron-doped wafers. It is shown that the predicted values for the lifetime limited by the boron-oxygen complexes after complete degradation are in very good agreement with the experimental observations. It is also shown that the present technique is a valuable tool to predict the cell LID from measurements on as-received wafers, which is of paramount interest for wafer/cell manufacturers.

28th European Photovoltaic Solar Energy Conference and Exhibition; 902-906

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Keywords

WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY, Silicon Feedstock, Crystallisation and Wafering

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