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3D Simulations of Back-Contact Back-Juntion c-Si(p) Solar Cells with Doped Point Contacts

descriptionPublicationkeyboard_double_arrow_right Article , Conference object 01 Jan 2013 Spain English Publisher:WIP

Authors: Carrió Díaz, David; Ortega Villasclaras, Pablo Rafael; López, Gema; López González, Juan Miguel; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón;

doi: 10.4229/28theupvsec2013-2cv.3.44

3D Simulations of Back-Contact Back-Juntion c-Si(p) Solar Cells with Doped Point Contacts

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Abstract

The back-contact back-junction BC-BJ solar cell concept is a promising photovoltaic structure for both laboratory and industrial c-Si solar cells. High efficiency devices based on this concept have been reported in the past using either diffused regions or applying the heterojunction with intrinsic thin layer HIT concept to perform both base and emitter contacts. In this work we use 3D numerical simulations to study the impact of technological parameters on device performance of c-Si(p) BC-BJ solar cells with point-like doped contacts. Numerical simulations allow us to optimize rear contact geometry as a trade-off between recombination and base resistive losses, leading to photovoltaic efficiencies higher than 18.3% and up to 22.3% on 2.2 cm FZ substrates depending on the back contact pattern and the passivation quality of base contacts.

28th European Photovoltaic Solar Energy Conference and Exhibition; 1607-1610

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Spain

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Keywords

Solar cells, 3D simulations, Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars, Point-like contacts, Laser processing, :Energies::Energia solar fotovoltaica::Cèl·lules solars [Àrees temàtiques de la UPC], Back-contact back-juntion BC-BJ solar cells, Silicon Solar Cell Characterisation and Modelling, WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY, Solar energy, Energia solar, C-Si, Cèl·lules solars

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