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Article . 1991 . Peer-reviewed

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In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As lateral resonant tunnelling transistor

descriptionPublicationkeyboard_double_arrow_right Article , Journal 26 Sep 1991Publisher:Institution of Engineering and Technology (IET)Journal:Electronics Letters, volume 27, pages 1,832-1,834 (issn: 0013-5194, eissn: 1350-911X,

Authors: Alan Seabaugh; John N. Randall; A.M. Bouchard; Yung-Chung Kao; James H. Luscombe;

doi: 10.1049/el:19911139

In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As lateral resonant tunnelling transistor

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Abstract

The first fabrication and characterisation are reported for a lateral resonant tunnelling transistor formed in the In0.52Al0.48As/In0.53Ga0.47As system lattice-matched to InP. Strong multiple negative differential resistances (NDR) and transconductances are observed indicative of resonant tunnelling across depletion-defined tunnel-barriers in the channel of a two-dimensional electron gas. Calculations of the potential energy surface and quasibound state spectrum for this heterostructure provide qualitative understanding of the device operation and close agreement with the measured multiple-NDR peak spacings.

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10 Research products, page 1 of 1

Effects of Thermal Stress on the Performance of Benzocyclobutene-Passivated In_0.52Al_0.48As/In_0.53Ga_0.47As High Electron Mobility Transistors
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A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}\hbox{/}\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ p-HEMTs
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