Characteristics of the super-steep subthreshold slope (SS) PN-body tied (PNBT) SOI-FET was confirmed with the 65 nm thin buried oxide (Box) fully depleted (FD)-SOI process, for the first time. The substrate bias (Vsub) was necessary for inducing the super-steep SS on 65 nm PNBT SOI-FETs. It is noted that the super-steep SS is observed with the negative and also the positive Vsub. The body current was below one tenth of the drain current. The trade-off between Ion/Ioff ratio and the hysteresis window was also shown. The confirmation of the super-steep SS PNBT SOI-FET on 65 nm technology is adding to confirmation on 200 nm SOI technology, so far, and is also valuable for ultralow power applications.