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AMS Acta

Conference object . 2001

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AMS Acta

Other literature type . 2001

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0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate

Name: 0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate
Keywords: ING-INF/01 Elettronica

descriptionPublicationkeyboard_double_arrow_right Other literature type , Conference object 01 Jan 2001 Italy Publisher:Alma Mater Studiorum - Università di Bologna

Authors: Bollaert, S.; Wallart, X.; Lepilliet, S.; Cappy, A.; Jalaguier, E.; Pocas, S.; Aspar, B.;

doi: 10.6092/unibo/amsacta/77

0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate

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Abstract

New In0.52Al0.48As/In0.53Ga0.47As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2 inch Silicon substrate with 0.12 µm T-shaped gate length. These new TS-HEMTs exhibit typical drain currents of 450 mA/mm and extrinsic transconductance up to 770 mS/mm. An extrinsic current cutoff frequency fT of 185 GHz is obtained. That result is the first reported for In0.52Al0.48As/In0.53Ga0.47As TS-HEMTs on Silicon substrate.

Country

Italy

Related Organizations

Alma Mater Studiorum University of Bologna
Italy

Keywords

ING-INF/01 Elettronica

10 Research products, page 1 of 1

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