Measurements of I–U characteristics at several temperatures, the voltage and frequency dependences of capacitance, and the photocurrent of samples are used for studying some electrical properties of heterojunctions formed on sintered layers of n-type CdTe. According to the geometrical arrangement, two types of samples are investigated: group A on an insulating substrate with planar electrodes, group B on a conducting substrate with sandwich electrodes. The p–n junctions are formed in both cases by chemical reaction with AuCl3 solution. The transport of charge across the junction at both, A and B groups is controlled by some process of tunnelling through the barrier from one side and by thermal emission from the opposite side of the junction followed by recombination at interface states. The C–U characteristics of B-samples show the usual form typical for the abrupt junction, whereas the capacitance of A-samples is essentially influenced by the internal capacitance of the polycrystalline layer. An energy band model of the junction is suggested. [Russian Text Ignored]