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Fabrication of In<inf>0.52</inf>Al<inf>0.48</inf>As/In<inf>0.53</inf>Ga<inf>0.47</inf>As p-HEMT utilizing Ne-based atomic layer etching

descriptionPublicationkeyboard_double_arrow_right Conference object , Article 01 May 2008Publisher:IEEEJournal:2008 20th International Conference on Indium Phosphide and Related Materials

Authors: Jong-In Song; Geun Young Yeom; Tae-Woo Kim; Jae-Hyung Jang; Sang Duk Park; Seung Heon Shin;

doi: 10.1109/iciprm.2008.4702898

Fabrication of In<inf>0.52</inf>Al<inf>0.48</inf>As/In<inf>0.53</inf>Ga<inf>0.47</inf>As p-HEMT utilizing Ne-based atomic layer etching

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Abstract

The characteristics of 0.15 mum In0.52Al0.48As/In0.53Ga0.47As pseudomorphic high electron mobility transistors (p-HEMTs) fabricated using the Ne-based atomic layer etching (ALET) technology and the Ar-based conventional reactive ion etching (RIE) technology are reported. Compared to the p-HEMTs fabricated using the Ar-based RIE, the p-HEMTs fabricated using the ALET exhibited improved device performance including trasconductance (GM = 1.38 S/mm), ION/IOFF ratio (1.18 times 104), and cutoff frequency (fT = 233 GHz), mainly due to the extremely low plasma-induced damage of the ALET to the Schottky gate area.

Related Organizations

Sungkyul University
Korea (Republic of)
Sungkyunkwan University
Korea (Republic of)
Sungkyul University
Korea (Republic of)

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