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Precise Transient Mechanism of Steep Subthreshold Slope PN-Body-Tied SOI-FET and Proposal of a New Structure for Reducing Leakage Current upon Turn-off

descriptionPublicationkeyboard_double_arrow_right Conference object , Article 01 Sep 2019Publisher:IEEEJournal:2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Authors: Takayuki Mori; Jiro Ida; Hiroki Endo; Yoshio Arai;

doi: 10.1109/sispad.2019.8870519

Precise Transient Mechanism of Steep Subthreshold Slope PN-Body-Tied SOI-FET and Proposal of a New Structure for Reducing Leakage Current upon Turn-off

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Abstract

In this study, the precise transient mechanism of the super-steep subthreshold slope PN-body-tied (PNBT) silicon on insulator field-effect transistor (SOI-FET) is clarified by using technology computer-aided design. We found out that the operation mechanism differs between the turn-on and turn-off. Additionally, a new PNBT SOI-FET structure with a second gate for the high-speed operation is proposed and we showed that the new structure can reduce the leakage current upon the turn-off.

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8 Research products, page 1 of 1

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