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Arsenic alloying is observed for epitaxial layers nominally intended to be In0.75Ga0.25N. Voids form beneath their interfaces with GaAs substrates, acting as sources of Ga + As out-diffusion into the growing epilayers. As a result, heteroepitaxial single-phase quaternary InxGa1-xAsyN1-y, films are formed with x similar to 0.55 and 0.05 menor que y menor que 0,10. While an undoped epilayer retains the wurtzite structure, a Mn-doped sample showed randomly spaced dopant segregations, which, together with a slightly higher As concentration, led to a transformation from the hexagonal to the twinned cubic phase.

Current prototypes of quantum-dot intermediate band solar cells suffer from voltage reduction due to the existence of carrier thermal escape. An enlarged sub-bandgap EL would not only minimize this problem, but would also lead to a bandgap distribution that exploits more efficiently the solar spectrum. In this work we demonstrate InAs/InGaP QD-IBSC prototypes with the following bandgap distribution: EG = 1.88 eV, EH = 1.26 eV and EL > 0.4 eV. We have measured, for the first time in this material, both the interband and intraband transitions by means of photocurrent experiments. The activation energy of the carrier thermal escape in our devices has also been measured. It is found that its value, compared to InAs/GaAs-based prototypes, does not follow the increase in EL. The benefits of using thin AlGaAs barriers before and after the quantum-dot layers are analyzed.

The intermediate band solar cell (IBSC) is based on a novel photovoltaic concept and has a limiting efficiency of 63.2%, which compares favorably with the 40.7% efficiency of a conventional, single junction solar cell. It is characterized by a material hosting a collection of energy levels within its bandgap, allowing the cell to exploit photons with sub-bandgap energies in a two-step absorption process, thus improving the utilization of the solar spectrum. However, these intermediate levels are often regarded as an inherent source of supplementary recombination, although this harmful effect can in theory be counteracted by the use of concentrated light. We present here a novel, low-temperature characterization technique using concentrated light that reveals how the initially enhanced recombination in the IBSC is reduced so that its open-circuit voltage is completely recovered and reaches that of a conventional solar cell.

Intermediate band solar cells (IBSCs) fabricated to date from In(Ga)As/GaAs quantum dot arrays (QD-IBSC) exhibit a quantum efficiency (QE) that extends to below bandgap energies. However, the production of sub-bandgap photocurrent relies often on the thermal and/or tunneling escape of carriers from the QDs, which is incompatible with preservation of the output voltage. In this work, we test the effectiveness of introducing a thick GaAs spacer in addition to an InAlGaAs strain relief layer (SRL) over the QDs to reduce carrier escape. From an analysis of the QE at different temperatures, it is concluded that escape via tunneling can be completely blocked under short-circuit conditions, and that carriers confined in QDs with an InAlGaAs SRL exhibit a thermal escape activation energy over 100 meV larger than in the case of InAs QDs capped only with GaAs.

The calculation of the energy spectrum and absorption coefficients of quantum dot nanostructured intermediate band solar cells using the Empiric K·P Hamiltonian method and its agreement with experimental data are summarized. The well established Luttinger Kohn Hamiltonian modified by Pikus and Bir for strained material, such as quantum dot arrays, is presented using a simplified strain field that allows for square band offsets. The energy spectrum and absorption coefficients are calculated with this new Hamiltonian. With the approximations made the energy spectrum results to be exactly the same but the absorption coefficient fits experiments less accurately. The computer time using the latter Hamiltonian is much longer than the former one.

Intermediate band solar cells must demonstrate the principle of voltage preservation in order to achieve high conversion efficiencies. Tunnel escape of carriers has proved deleterious for this purpose in quantum dot intermediate band solar cells. In previous works, thick spacers between quantum dot layers were demonstrated as a means of reducing tunnel escape, but this approach is unrealistic if a large number of quantum dot layers have to be grown. In this work we report experimental proof that the use of field damping layers is equally effective at reducing tunnel carrier escape, by reducing the potential drop in the QD-stack and the associated electric field. Moreover, we demonstrate that the fact that tunnel carrier escape takes place under short-circuit conditions does not imply that voltage preservation cannot be achieved. We describe a theory that relates the evolution of the tunnel escape to bias voltage and the preservation of the voltage in an IBSC. Temperature and voltage-dependent quantum efficiency measurements, temperature dependent open-circuit voltage measurements and calculations of the internal electric field in IBSCs serve as the basis of the proposed theory.

The project FULLSPECTRUM — an Integrated Project (IP) in the terminology of the European Commission — pursues a better exploitation of the FULL solar SPECTRUM by (1) further developing concepts already scientifically proven but not yet developed and (2) by trying to prove new ones in the search for a breakthrough in photovoltaic (PV) technology. More specific objectives are the development of: (a) III–V multijunction cells (MJC), (b) solar thermo-photovoltaic (TPV) converters, (c) intermediate band (IB) materials and cells (IBC), (d) molecular-based concepts (MBC) for full PV utilisation of the solar spectrum and (e) manufacturing technologies (MFG) for novel concepts including assembling. MJC technology towards 40% efficiency will be developed using lower cost substrates and high light concentration (up or above 1000 suns). TPV is a concept with a theoretically high efficiency limit because the entire energy of all the photons is used in the heating process and because the non-used photons can be fed back to the emitter, therefore helping in keeping it hot. In the IBC approach, sub-bandgap photons are exploited by means of an IB. Specific IB materials will be sought by direct synthesis suggested by material-band calculations and using nanotechnology in quantum dot (QD) IBCs. In the development of the MBC, topics such as the development of two-photon dye cells and the development of a static global (direct and diffuse) light concentrator by means of luminescent multicolour dyes and QDs, with the radiation confined by photonic crystals, will be particularly addressed. MFG include optoelectronic assembling techniques and coupling of light to cells with new-optic miniconcentrators.