• Energy Research

AbstractHot‐wire chemical vapor deposition was utilized to develop rapidly grown and high‐quality phosphorus‐doped amorphous silicon (a‐Si:H) thin films for poly‐crystalline silicon on tunnel oxide carrier‐selective passivating contacts. Deposition rates higher than 150 nm/min were obtained for the in situ phosphorus‐doped a‐Si:H layers. To optimize the passivating contact performance, material properties such as microstructures as well as hydrogen content were characterized and analyzed for these phosphorus‐doped a‐Si:H films. The results show that a certain microstructure of the films is crucial for the passivation quality and the conductance of passivating contacts. Porous silicon layers were severely oxidized during high‐temperature crystallization, giving rise to very low conductance. The insufficient effective doping concentration in these layers also yields inferior passivation quality due to lack of field‐effect passivation. On the other hand, dense silicon layers are insensitive to oxidation but very sensitive to blistering of the films during the subsequent high‐temperature process steps. By optimizing the deposition parameters, a firing‐stable‐implied open‐circuit voltage of 737 mV and a contact resistivity of 10 mΩ·cm2were achieved at a high deposition rate of 100 nm/min while 733 mV and 90 mΩ·cm2were achieved at an even higher deposition rate of 150 nm/min.

AbstractIn this work, we propose a route to achieve a certified efficiency of up to 24.51% for silicon heterojunction (SHJ) solar cell on a full‐size n‐type M2 monocrystalline‐silicon Cz wafer (total area, 244.53 cm2) by mainly improving the design of the hydrogenated intrinsic amorphous silicon (a‐Si:H) on the rear side of the solar cell and the back reflector. A dense second intrinsic a‐Si:H layer with an optimized thickness can improve the vertical carrier transport, resulting in an improved fill factor (FF). In order to reduce the plasmonic absorption at the back reflector, a low‐refractive‐index magnesium fluoride (MgF2) is deposited before the Ag layer; this leads to an improved gain of short circuit current density (Jsc). In total, together with MgF2 double antireflection coating and other fine optimizations during cell fabrication process, ~1% absolute efficiency enhancement is finally obtained. A detailed loss analysis based on Quokka3 simulation is presented to confirm the design principles, which also gives an outlook of how to improve the efficiency further.

AbstractA highly transparent passivating contact (TPC) as front contact for crystalline silicon (c-Si) solar cells could in principle combine high conductivity, excellent surface passivation and high optical transparency. However, the simultaneous optimization of these features remains challenging. Here, we present a TPC consisting of a silicon-oxide tunnel layer followed by two layers of hydrogenated nanocrystalline silicon carbide (nc-SiC:H(n)) deposited at different temperatures and a sputtered indium tin oxide (ITO) layer (c-Si(n)/SiO2/nc-SiC:H(n)/ITO). While the wide band gap of nc-SiC:H(n) ensures high optical transparency, the double layer design enables good passivation and high conductivity translating into an improved short-circuit current density (40.87 mA cm−2), fill factor (80.9%) and efficiency of 23.99 ± 0.29% (certified). Additionally, this contact avoids the need for additional hydrogenation or high-temperature postdeposition annealing steps. We investigate the passivation mechanism and working principle of the TPC and provide a loss analysis based on numerical simulations outlining pathways towards conversion efficiencies of 26%.

The color produced by visible light that reflects from the photovoltaic modules can influence visual aesthetics for colored photovoltaic applications, such as the building integrated photovoltaic and the vehicles integrated photovoltaic. How two colors lying close together can be perceived by the human eye is important for aesthetic design. In this article, we investigate the reflectance spectra variation caused by the variation of indium tin oxide thickness and incidence angle of sunlight based on the well-known silicon heterojunction solar cells and modules. By converting the reflectance spectra into the Delta E 2000 value, we quantify whether differences in color can be perceived. The colors are also predicted based on the standard red, green, and blue color space. The results show that the reflectance variation because of an ITO thickness deviation of 5 nm in SHJ solar cells leads to a perceptible color difference, which can be suppressed after encapsulation but is still perceptible on close observation. The ITO thickness deviation should be controlled within 3 nm to produce a nearly imperceptible visual appearance. The color difference of SHJ modules with an ITO thickness of 70 nm is nearly imperceptible if the incidence angle is below 70°. For comparison, the color differences of the passivated emitter and rear contact solar cells using SiNx as an antireflection layer is also investigated.