- Wanqiang Fu; Qizhen Chen;
Peng Gao; Linqin Jiang; +4 AuthorsPeng Gao
Derived by OpenAIRE algorithms or harvested from 3rd party repositoriesPeng Gao in OpenAIREWanqiang Fu; Qizhen Chen; Peng Gao; Linqin Jiang; Yu Qiu;Peng Gao
Derived by OpenAIRE algorithms or harvested from 3rd party repositoriesPeng Gao in OpenAIRE
Dong-Sing Wuu; Dong-Sing Wuu
Harvested from ORCID Public Data FileDong-Sing Wuu in OpenAIRE Ray-Hua Horng; Ray-Hua Horng
Harvested from ORCID Public Data FileRay-Hua Horng in OpenAIRE Shui-Yang Lien; Shui-Yang Lien
Harvested from ORCID Public Data FileShui-Yang Lien in OpenAIREThe surface morphology of porous source electrodes plays a significant role in the performance of vertical channel indium–gallium–zinc oxide thin-film transistors (VC-IGZO-TFTs). This study systematically investigates the properties of porous MXene-based source electrodes and their impact on VC-IGZO-TFTs fabricated with varying MXene concentrations. As the MXene concentration increases, both the sheet resistance and porosity of the electrodes decrease. VC-IGZO-TFTs based on a 3.0 mg/mL MXene concentration exhibit optimal electrical performance, with a threshold voltage (Vth) of 0.16 V, a subthreshold swing (SS) of 0.20 V/decade, and an on/off current ratio (Ion/Ioff) of 4.90 × 105. Meanwhile, the VC-IGZO-TFTs exhibit excellent electrical reliability and mechanical stability. This work provides a way to analyze the influence of sheet resistance and porosity on the performance of VC-IGZO-TFTs, offering a viable approach for enhancing device efficiency through porous MXene electrode engineering.
add ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.<script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.3390/en18092331&type=result"></script>'); --> </script>For further information contact us at helpdesk@openaire.eu - Wanqiang Fu; Qizhen Chen; Peng Gao; Linqin Jiang; +4 Authors
Peng Gao
Derived by OpenAIRE algorithms or harvested from 3rd party repositoriesPeng Gao in OpenAIREWanqiang Fu; Qizhen Chen; Peng Gao; Linqin Jiang; Yu Qiu;Peng Gao
Derived by OpenAIRE algorithms or harvested from 3rd party repositoriesPeng Gao in OpenAIRE Dong-Sing Wuu; Dong-Sing Wuu
Harvested from ORCID Public Data FileDong-Sing Wuu in OpenAIRE Ray-Hua Horng; Ray-Hua Horng
Harvested from ORCID Public Data FileRay-Hua Horng in OpenAIRE Shui-Yang Lien; Shui-Yang Lien
Harvested from ORCID Public Data FileShui-Yang Lien in OpenAIREThe surface morphology of porous source electrodes plays a significant role in the performance of vertical channel indium–gallium–zinc oxide thin-film transistors (VC-IGZO-TFTs). This study systematically investigates the properties of porous MXene-based source electrodes and their impact on VC-IGZO-TFTs fabricated with varying MXene concentrations. As the MXene concentration increases, both the sheet resistance and porosity of the electrodes decrease. VC-IGZO-TFTs based on a 3.0 mg/mL MXene concentration exhibit optimal electrical performance, with a threshold voltage (Vth) of 0.16 V, a subthreshold swing (SS) of 0.20 V/decade, and an on/off current ratio (Ion/Ioff) of 4.90 × 105. Meanwhile, the VC-IGZO-TFTs exhibit excellent electrical reliability and mechanical stability. This work provides a way to analyze the influence of sheet resistance and porosity on the performance of VC-IGZO-TFTs, offering a viable approach for enhancing device efficiency through porous MXene electrode engineering.
add ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.<script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.3390/en18092331&type=result"></script>'); --> </script>For further information contact us at helpdesk@openaire.eu
