• Energy Research

Cu(In,Ga)Se2 (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S2 (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning method which can be used for deposition of solution-based or nanoparticle-based CIGS films with high throughput. XRD and Raman spectra indicate that no secondary phase is formed in the as-deposited CIGS film since quaternary chalcopyrite nanoparticles are used as the base solution for printing. Besides, CIGSe films with various Cu/(In + Ga) ratios could be obtained by finely tuning the composition of CIGS nanoparticles contained in the ink, which was found to strongly influence the devices performance and film morphology. To date, this is the first successful fabrication of a solar device by inkjet printing of CIGS nanoparticles.

Cu(In,Ga)Se2 (CIGSe) thin film solar cells were fabricated by direct inkjet printing of Cu(In,Ga)S2 (CIGS) nanoparticles followed by rapid thermal annealing under selenium vapor. Inkjet printing is a low-cost, low-waste, and flexible patterning method which can be used for deposition of solution-based or nanoparticle-based CIGS films with high throughput. XRD and Raman spectra indicate that no secondary phase is formed in the as-deposited CIGS film since quaternary chalcopyrite nanoparticles are used as the base solution for printing. Besides, CIGSe films with various Cu/(In + Ga) ratios could be obtained by finely tuning the composition of CIGS nanoparticles contained in the ink, which was found to strongly influence the devices performance and film morphology. To date, this is the first successful fabrication of a solar device by inkjet printing of CIGS nanoparticles.

Thin-film solar cells based on Cu(In,Ga)(Se,S) 2 (CIGS) have demonstrated both high efficiencies and a high cost-reduction potential in industrial production. This way, future CIGS module production lines can be profitable even for scales below the GW range. Among the different technologies, only the coevaporation method has demonstrated efficiencies above 20%, approaching the record values of polycrystalline Si cells. The main focus of this contribution is on the new results of the ZSW cell line with efficiencies above 20%, as well as on the mini-module line on glass substrates. Mini modules (10 cm × 10 cm) with efficiencies in the range of 17% give a proof of concept for industrial-sized modules. ZSW is also developing flexible cells and modules, transferring the processes from the glass-based technology. We achieved 18.6% cell efficiency on metal substrates and a 15.4% efficient mini module could be demonstrated with adapted methods of module patterning. In order to develop industrially relevant processes for foils, we are running a roll-to-roll deposition plant. Additionally, we have improved CIGS cell efficiencies with alternative buffers to certified 19.0% for solution-grown Zn(O,S), to 16.4% for sputtered Zn(O,S), and 17.1% for evaporated In 2S 3. Our cells deposited by vacuum-free methods exhibit an efficiency of 8.5% with a nanoparticle-based process.

Thin-film solar cells based on Cu(In,Ga)(Se,S) 2 (CIGS) have demonstrated both high efficiencies and a high cost-reduction potential in industrial production. This way, future CIGS module production lines can be profitable even for scales below the GW range. Among the different technologies, only the coevaporation method has demonstrated efficiencies above 20%, approaching the record values of polycrystalline Si cells. The main focus of this contribution is on the new results of the ZSW cell line with efficiencies above 20%, as well as on the mini-module line on glass substrates. Mini modules (10 cm × 10 cm) with efficiencies in the range of 17% give a proof of concept for industrial-sized modules. ZSW is also developing flexible cells and modules, transferring the processes from the glass-based technology. We achieved 18.6% cell efficiency on metal substrates and a 15.4% efficient mini module could be demonstrated with adapted methods of module patterning. In order to develop industrially relevant processes for foils, we are running a roll-to-roll deposition plant. Additionally, we have improved CIGS cell efficiencies with alternative buffers to certified 19.0% for solution-grown Zn(O,S), to 16.4% for sputtered Zn(O,S), and 17.1% for evaporated In 2S 3. Our cells deposited by vacuum-free methods exhibit an efficiency of 8.5% with a nanoparticle-based process.

AbstractThis paper presents optimization studies on the formation of indium sulfide buffer layers for high‐efficiency copper indium gallium diselenide (CIGS) thin‐film solar cells with atomic layer chemical vapour deposition (ALCVD) from separate pulses of indium acetylacetonate and hydrogen sulfide. A parametric study of the effect of deposition temperature between 160° and 260°C and thickness (15–30 nm) shows an optimal value at about 220°C for a layer thickness of 30 nm, leading to an efficiency of 16·4%. Analysis of the device shows that indium sulfide layers are characterised by an improvement of the blue response of the cells compared with a standard CdS‐processed cell, due to a high apparent band gap (2·7–2·8 eV), higher open‐circuit voltages (up to 665 mV) and fill factor (78%). This denotes high interface quality. Atomic diffusion processes of sodium and copper in the buffer layer are demonstrated. Copyright © 2003 John Wiley & Sons, Ltd.

AbstractThis paper presents optimization studies on the formation of indium sulfide buffer layers for high‐efficiency copper indium gallium diselenide (CIGS) thin‐film solar cells with atomic layer chemical vapour deposition (ALCVD) from separate pulses of indium acetylacetonate and hydrogen sulfide. A parametric study of the effect of deposition temperature between 160° and 260°C and thickness (15–30 nm) shows an optimal value at about 220°C for a layer thickness of 30 nm, leading to an efficiency of 16·4%. Analysis of the device shows that indium sulfide layers are characterised by an improvement of the blue response of the cells compared with a standard CdS‐processed cell, due to a high apparent band gap (2·7–2·8 eV), higher open‐circuit voltages (up to 665 mV) and fill factor (78%). This denotes high interface quality. Atomic diffusion processes of sodium and copper in the buffer layer are demonstrated. Copyright © 2003 John Wiley & Sons, Ltd.

AbstractThe aim of the present contribution is to give a review on the recent work concerning Cd‐free buffer and window layers in chalcopyrite solar cells using various deposition techniques as well as on their adaptation to chalcopyrite‐type absorbers such as Cu(In,Ga)Se2, CuInS2, or Cu(In,Ga)(S,Se)2. The corresponding solar‐cell performances, the expected technological problems, and current attempts for their commercialization will be discussed. The most important deposition techniques developed in this paper are chemical bath deposition, atomic layer deposition, ILGAR deposition, evaporation, and spray deposition. These deposition methods were employed essentially for buffers based on the following three materials: In2S3, ZnS, Zn1 − xMgxO. Copyright © 2010 John Wiley & Sons, Ltd.

AbstractThe aim of the present contribution is to give a review on the recent work concerning Cd‐free buffer and window layers in chalcopyrite solar cells using various deposition techniques as well as on their adaptation to chalcopyrite‐type absorbers such as Cu(In,Ga)Se2, CuInS2, or Cu(In,Ga)(S,Se)2. The corresponding solar‐cell performances, the expected technological problems, and current attempts for their commercialization will be discussed. The most important deposition techniques developed in this paper are chemical bath deposition, atomic layer deposition, ILGAR deposition, evaporation, and spray deposition. These deposition methods were employed essentially for buffers based on the following three materials: In2S3, ZnS, Zn1 − xMgxO. Copyright © 2010 John Wiley & Sons, Ltd.