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description Publicationkeyboard_double_arrow_right Article , Journal 2009 NetherlandsPublisher:American Chemical Society (ACS) Authors: van Dorp, D.H.;Kooij, E.S.;
Kooij, E.S.
Kooij, E.S. in OpenAIREArnoldbik, W.M.;
Kelly, J.J.;Arnoldbik, W.M.
Arnoldbik, W.M. in OpenAIREdoi: 10.1021/cm900374s
Anodic polarization of SiC atmodest potential in dilute fluoride solution of pH 3 surprisingly gives rise to the growth of micrometer-thick surface layers, clearly revealed with scanning electron microscopy. The reaction occurs at p-type SiC in the dark and at n-type SiC under (supra)bandgap illumination. The surface layer was shown by Rutherford backscattering spectrometry (RBS) to consist of silicon dioxide and to contain excess oxygen. Elastic recoil detection (ERD) indicated only a low level of carbon and fluoride in the layer but a considerable content of hydrogen. The growth kinetics was characterized in situ by spectroscopic ellipsometry and electrical impedance spectroscopy. The results suggest the formation of a duplex layer: a thin inner dielectric oxide and a thick hydrated outer oxide. The latter must have a considerable degree of porosity to allow diffusion/ migration of reactants and products during oxide growth.
add ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1021/cm900374s&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.euAccess RoutesGreen 18 citations 18 popularity Top 10% influence Top 10% impulse Average Powered by BIP!
more_vert add ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1021/cm900374s&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.eudescription Publicationkeyboard_double_arrow_right Article , Journal 2009 NetherlandsPublisher:American Chemical Society (ACS) Authors: van Dorp, D.H.;Kooij, E.S.;
Kooij, E.S.
Kooij, E.S. in OpenAIREArnoldbik, W.M.;
Kelly, J.J.;Arnoldbik, W.M.
Arnoldbik, W.M. in OpenAIREdoi: 10.1021/cm900374s
Anodic polarization of SiC atmodest potential in dilute fluoride solution of pH 3 surprisingly gives rise to the growth of micrometer-thick surface layers, clearly revealed with scanning electron microscopy. The reaction occurs at p-type SiC in the dark and at n-type SiC under (supra)bandgap illumination. The surface layer was shown by Rutherford backscattering spectrometry (RBS) to consist of silicon dioxide and to contain excess oxygen. Elastic recoil detection (ERD) indicated only a low level of carbon and fluoride in the layer but a considerable content of hydrogen. The growth kinetics was characterized in situ by spectroscopic ellipsometry and electrical impedance spectroscopy. The results suggest the formation of a duplex layer: a thin inner dielectric oxide and a thick hydrated outer oxide. The latter must have a considerable degree of porosity to allow diffusion/ migration of reactants and products during oxide growth.
add ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1021/cm900374s&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.euAccess RoutesGreen 18 citations 18 popularity Top 10% influence Top 10% impulse Average Powered by BIP!
more_vert add ClaimPlease grant OpenAIRE to access and update your ORCID works.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.This Research product is the result of merged Research products in OpenAIRE.
You have already added works in your ORCID record related to the merged Research product.All Research productsarrow_drop_down <script type="text/javascript"> <!-- document.write('<div id="oa_widget"></div>'); document.write('<script type="text/javascript" src="https://beta.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=10.1021/cm900374s&type=result"></script>'); --> </script>
For further information contact us at helpdesk@openaire.eu