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AbstractRevolutionary changes in energy storage technology have put forward higher requirements on next‐generation anode materials for lithium‐ion battery. Recently, a new class of materials with complex stoichiometric ratios, high‐entropy oxide (HEO), has gradually emerging into sight and embracing the prosperity. The ideal elemental adjustability and attractive synergistic effect make HEO promising to break through the integrated performance bottleneck of conventional anodes and provide new impetus for the design and development of electrochemical energy storage materials. Here, the research progress of HEO anodes is comprehensively reviewed. The driving force behind phase stability, the role of individual cations, potential mechanisms for controlling properties, as well as state‐of‐the‐art synthetic strategies and modification approaches are critically evaluated. Finally, we envision the future prospects and related challenges in this field, which will bring some enlightening guidance and criteria for researchers to further unlock the mysteries of HEO anodes.image

AbstractThis work reports the synthesis, characterization, photophysical, and photovoltaic properties of five new thieno[3,2‐b][1]benzothiophene isoindigo (TBTI)‐containing low bandgap donor–acceptor conjugated polymers with a series of comonomers and different side chains. When TBTI is combined with different electron‐rich moieties, even small structural variations can have significant impact on thin film morphology of the polymer:phenyl C70 butyric acid methyl ester (PCBM) blends. More importantly, high‐resolution electron energy loss spectroscopy is used to investigate the phase‐separated bulk heterojunction domains, which can be accurately and precisely resolved, enabling an enhanced correlation between polymer chemical structure, photovoltaic device performance, and morphology.

Abstract Polymer light emitting diodes (PLEDs) may revolutionize lighting and display industries. PLEDs would enable printing of display or lighting panels on large area substrates that could substantially reduce fabrication costs by avoiding expensive vacuum processes presently used in OLED technologies. PVK is one of the most popular hosts for blue PLEDs. However, PVK has very poor electron transport properties and oxadiazole based electron dopants, e.g. PBD or OXD-7, are used to improve charge transport. This is generally ascribed to capture and transport of electrons on the PBD or OXD-7. Here we show that this is not necessarily the only reason for improved efficiency upon PVK doping. We demonstrate that devices with PVK doped with PBD or OXD-7 have emission lasting up to 1 ms which in some cases may be greater than prompt emission from excitons formed initially on the dopant. This long-lived emission is arising mainly due to formation of an exciplex between the PVK and PBD/OXD-7. This exciplex state then repopulates dopant iridium complexes over a long period of time giving very long-lived emission. We also note that this exciplex-fed long-lived emission from heavy metal complexes is observed in several PLEDs with PBD and PVK (and also OXD-7) doped with blue or green iridium phosphors indicating this to be a general phenomenon.

Mixed transition metal oxides with high theoretical capacity show great potential to replace carbonaceous anode materials in lithium-ion batteries.

AbstractHigh‐performance dye‐sensitized solar cell (DSSC) devices rely on photoanodes that possess excellent light‐harvesting capabilities and high surface areas for sufficient dye adsorption. In this work, morphologically controlled SnO2 microstructures were synthesized and used as an efficient light‐backscattering layer on top of a nanocrystalline TiO2 layer to prepare a double‐layered photoanode. By optimizing the thickness of both the TiO2 bottom layer and the SnO2 top layer, a high power conversion efficiency (PCE) of 7.8 % was achieved, an enhancement of approximately 38 % in the efficiency compared with that of a nanocrystalline TiO2‐only photoanode (5.6 %). We attribute this efficiency improvement to the superior light‐backscattering capability of the SnO2 microstructures.

Highly efficient nanocatalysts which can selectively decompose hydrous hydrazine for hydrogen production are introduced.

AbstractErbium doped silicon-rich silica offers broad band and very efficient excitation of erbium photoluminescence (PL) due to a sensitization effect attributed to silicon nanocrystals (Si-nc), which grow during thermal treatment. PL decay lifetime measurements of sensitised Er3+ ions are usually reported to be stretched or multi exponential, very different to those that are directly excited, which usually show a single exponential decay component.In this paper, we report on SiO2 thin films doped with Si-nc's and erbium. Time resolved PL measurements reveal two distinct 1.54μm Er decay components; a fast microsecond component, and a relatively long lifetime component (10ms). We also study the structural properties of these samples through TEM measurements, and reveal the formation of Er clusters. We propose that these Er clusters are responsible for the fast μs decay component, and we develop rate equation models that reproduce the experimental transient observations, and can explain some of the reported transient behaviour in previously published literature.

Silicon solar cells featuring carrier selective contacts have been demonstrated to reach ultra-high conversion efficiency. In this work, the electron-selective contact characteristics of ultrathin TiOx films deposited by atomic layer deposition on silicon are investigated via simultaneous consideration of the surface passivation quality and the contact resistivity. Thin TiOx films are demonstrated to provide not only good passivation to silicon surfaces, but also allow a relative low contact resistivity at the TiOx/Si heterojunction. A maximum implied open-circuit voltage (iVoc) of ~703 mV is achieved with the passivation of a 4.5 nm TiOx film, and a relatively low contact resistivity of (~0.25 Ω cm2 is obtained at the TiOx/n-Si heterojunction simultaneously. N-type silicon solar cell with the champion efficiency of 20.5% is achieved by the implementation of a full-area electron-selective TiOx contacts. A simulated efficiency of up to 23.7% is achieved on the n-type solar cell with a full-area TiOx contact. The efficient, low cost electron-transporting/hole-blocking TiOx layer enables the fabrication of high efficiency silicon solar cells with a simplified process flow.