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A method is presented for calculating the electromagnetic forces on the end windings of turbine generators for both the steady state and transient modes of operation. Part 1 of this paper deals with the basic concepts of the force calculation and gives several examples of steady state forces and how they vary with load and power factor. PartII deals with several types of transient operation. The currents and fields which these transients produce are discussed and forces are found for various cases such as short circuits, synchronizing out of phase and transmission line switching.

AbstractThis paper presents an understanding of the fundamental carrier transport mechanism in hydrogenated amorphous silicon (a‐Si:H)‐based n/p junctions. These n/p junctions are, then, used as tunneling and recombination junctions (TRJ) in tandem solar cells, which were constructed by stacking the a‐Si:H‐based solar cell on the heterojunction with intrinsic thin layer (HIT) cell. First, the effect of activation energy (Ea) and Urbach parameter (Eu) of n‐type hydrogenated amorphous silicon (a‐Si:H(n)) on current transport in an a‐Si:H‐based n/p TRJ has been investigated. The photoluminescence spectra and temperature‐dependent current–voltage characteristics in dark condition indicates that the tunneling is the dominant carrier transport mechanism in our a‐Si:H‐based n/p‐type TRJ. The fabrication of a tandem cell structure consists of an a‐Si:H‐based top cell and an HIT‐type bottom cell with the a‐Si:H‐based n/p junction developed as a TRJ in between. The development of a‐Si:H‐based n/p junction as a TRJ leads to an improved a‐Si:H/HIT‐type tandem cell with a better open circuit voltage (Voc), fill factor (FF), and efficiency. The improvements in the cell performance was attributed to the wider band‐tail states in the a‐Si:H(n) layer that helps to an enhanced tunneling and recombination process in the TRJ. The best photovoltage parameters of the tandem cell were found to be Voc = 1430 mV, short circuit current density = 10.51 mA/cm2, FF = 0.65, and efficiency = 9.75%. Copyright © 2015 John Wiley & Sons, Ltd.

Abstract An alkaline earth boro-aluminosilicate glass (Eagle XG), a soda-lime glass, and a light-weight polyethylene-terephthalate (PET) foil, used as typical substrates for photovoltaics, were treated by an energetic proton beam (3 MeV, dose 106–107 Gy) corresponding to approx. 30 years of operation at low Earth orbit. Properties of the irradiated substrates were characterized by atomic force microscopy, optical absorption, optical diffuse reflectance, Raman spectroscopy, X-ray photoelectron spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, and terahertz (THz) spectroscopy. Minimal changes of optical and morphological properties are detected on the bare Eagle XG glass, whereas the bare PET foil exhibits pronounced increase in optical absorption, generation of photoluminescence, as well as mechanical bending. On the other hand, the identical substrates coated with Indium-tin-oxide (ITO), which is a typical material for transparent electrodes in photovoltaics, exhibit significantly higher resistance to the modifications by protons while ITO structural and electronic properties remain unchanged. The experimental results are discussed considering a potential application of these materials for missions in space.

Abstract This paper presents a comparison of commercially used German and Russian reactor pressure vessel steels from the positron annihilation spectroscopy (PAS) point of view, having in mind knowledge obtained also from other techniques from the last decades. The second generations of Russian RPV steels seems to be fully comparable with German steels and their quality enables prolongation of NPP operating lifetime over projected 40 years. The embrittlement of CrMoV steel is very low due to the dynamic recovery of radiation-induced defects at reactor operating temperatures.

Abstract As promising candidates for thermophotovoltaic energy conversion systems, epitaxial thin film III–V cells have gained increasing attention due to their potential for reduced weight. However, few studies have been done to date to enhance the performance of epitaxial single crystal GaSb thin film cells. In this work, the internal quantum efficiencies of epitaxial single crystal GaSb thin film cells with Zn-diffused and epitaxial p–n junctions were predicted with models verified using the corresponding experimental results. The results are the first to indicate that, for the former, when the base region thickness is approximately equal to minority carrier diffusion length, the maximal IQE can be obtained and it is notably higher than the IQE of GaSb bulk cell at wavelengths from 800 to 1700 nm. Reducing bottom surface recombination velocity and increasing hole Shockley–Read–Hall lifetime could also increase the IQE. While for the latter, the results demonstrated that the optimal base region thickness is also approximately equal to minority diffusion length, and reducing emitter region thickness will increase the IQE when the base region is optimized. The comparison of the two optimized GaSb thin film cells showed that the GaSb thin film cell with epitaxial p–n junction has a higher IQE.

A new approach for the electromagnetic control and propulsion of a current carrying electric arc plasma ring is described. The essence of the approach is to form and manipulate the arc plasma outside rather than inside a magnetic field producing coil so that pulsed plasma thrusts can be produced in a choice of different directions. The interaction of the electric arc, formed in atmospheric pressure air, with such a magnetic field has been investigated. It has been shown that a stable azimuthal plasma ring can be rapidly produced by the simple process of separating two annular contacts. Pulsed plasma propulsion is obtained when the arc plasma and B-field sustaining current is reduced to zero whereby the constraining electromagnetic forces are removed and, as a consequence, the resulting plasma ring expands radially outwards. Several different measurement techniques have been deployed for investigating the behavior of the plasma ring. These include electrical probing, B-field probing and high-speed plus video photography. The results suggest that the plasma control and propulsion is governed by a combination of effects including ablation of the material around which the plasma ring is formed and self-pressurization related to the device geometry, as well as the electromagnetic forces. Preliminary results indicate that through the use of appropriate device geometries, the arc plasma may be propelled in axially opposite directions as well as radially.

Silicon heterojunction solar cells use crystalline silicon (c-Si) wafers as optical absorbers and employ bilayers of doped/intrinsic hydrogenated amorphous silicon (a-Si:H) to form passivating contacts. Recently, we demonstrated that such solar cells increase their operating voltages and thus their conversion efficiencies during light exposure. We found that this performance increase is due to improved passivation of the a-Si:H/c-Si interface and is induced by injected charge carriers (either by light soaking or forward-voltage biasing of the device). Here, we discuss this counterintuitive behavior and establish that: (i) the performance increase is observed in solar cells as well as modules; (ii) this phenomenon requires the presence of doped a-Si:H films, but is independent from whether light is incident from the a-Si:H(p) or the a-Si:H(n) side; (iii) UV and blue photons do not play a role in this effect; (iv) the performance increase can be observed under illumination intensities as low as 20 W m(-1) (0.02-sun) and appears to be almost identical in strength when under 1-sun (1000 W m(-1)); (v) the underlying physical mechanism likely differs from annealing-induced surface passivation.

Abstract Currently, the first generation of silicon solar cells is dominating the photovoltaic market. Silicon cells are produced by various methods, which employ either crystalline or multi-crystalline substrates. However, both these manufacturing processes are expensive and potentially harmful to the environment and health. One example of this is that the surface is given its texture in a highly corrosive water solution of nitric and hydrofluoric acid. Additionally, both the diffusion and manufacturing of p-n junction and of metal contacts are associated with very high temperatures. This prompted us in our search for cheaper and more environmental friendly technologies. In this work, we discuss the possibility of producing components of photovoltaic cells by employing atomic layer deposition and hydrothermal technologies. This does not require the use of hazardous chemicals and high temperatures. The maximum efficiency of zinc oxide/silicon solar cells is 14% and 10% for textured and planar structures, respectively. A environmentally-friendly and simple procedure is thus being proposed, which, together with its relative efficiency, makes it an attractive alternative to the present procedure.

Abstract Thermodynamic parameters and transport coefficients have been calculated for a multicomponent and chemically reacting U-C-F gas mixture in the steady flow gaseous core fission reactor. Element abundances are consistent with thermodynamic equilibrium between the gas mixture and a cooled solid graphite wall at 2500 K. Results are presented for various pressures, a fluorine potential of 5.6 and temperatures between 2500 and 7000 K. As a result of dissociation processes of uranium and carbon fluoride compounds, “effective” values of thermodynamic parameters and transport coefficients show anomalous behaviour with respect to so-called “frozen” values. The chemical reaction energy of the U-C-F gas mixture has been calculated as the driving-force behind the process of fuel redistribution to attain criticality conditions inside a functioning reactor.