CdTe‐based thin film solar cell has been modeled and enumerated with a thin CuInTe2 (CIT) current booster layer. CdTe‐based n‐CdS/p‐CdTe/p+‐CIT/p++‐WSe2 heterojunction device is evaluated for the highest performance. It is revealed that physical parameters such as thickness, doping, and defects of the CIT layer have a significant influence on the performance of the CdTe solar cell. The device shows an efficiency of 37.46% with an open‐circuit voltage, VOC, of 1.102 V, short‐circuit current density, JSC, of 38.50 mA cm−2, and fill factor, FF, of 88.30%. The use of the photon recycling technique with a Bragg reflector with 98% back and 95% front reflectance only provides an efficiency of ≈44.3% with a current of 45.4 mA cm−2. These findings are very hopeful for the production of efficient CdTe solar cells in the near future.