Abstract We succeeded in growing CZ monocrystalline silicon crystals with a longer lifetime than previously achieved. The MCZ technique was not used; instead, we employed melt-phobic quartz crucibles in a conventional CZ furnace. The improved lifetime is the result of reduced carbon incorporation into the growing crystals due to the suppression of SiO evaporation from the melt in the melt-phobic crucible. The melt-phobic effect of our crucibles has the potential to control the convection of molten silicon.