© . This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ Localized p-doped nanojunctions (200–300 nm in diameter) were formed in n-type crystalline silicon substrates and were characterized using scanning electron microscopy (SEM) and conductive-probe atomic force microscopy (C-AFM). Localized doping was performed by diffusion through sub-micron sized holes in a silicon-oxide mask defined using self-organized polystyrene nanoparticles. After oxide removal, a significant brightness contrast in the SEM top and side view images strongly suggested the successful local doping of these areas. Furthermore, local current-voltage measurements performed by C-AFM revealed an open circuit voltage and a short-circuit current only in the areas defined as nanojunctions. This photovoltaic effect is driven by the laser used to control cantilever deflection in the AFM. We acknowledge the financial support of the InnoEnergy PhD School Program and the European Institute of Technology (EIT). This work was partially funded by the Spanish government under projects TEC2017-82305-R, ENE2016-78933-C4-1-R and ENE2017-87671-C3-2-R, and by the Agence Nationale de la Recherche through the ANR project “APOCALYPSO” (ANR-13- PRGE-0003-01). Peer Reviewed