The use of graphene as transparent conducting layer in devices that require high temperature processing is proposed. The material shows stability upon thermal treatments up to 1100 °C ifc apped with a sacrificial silicon layer. The use of Cu foil or evaporated Cu as catalysts in Catalytic-Chemical Vapor Deposition growth gives rise to graphene ofs imilar properties, which represents a promising result in view of its direct integration in microelectronic devices. Photovoltaic p-i-n thin film devices were fab- ricated on the as-deposited or annealed graphene membranes and compared with similar devices that incorporate as-deposited Indium Tin Oxide. No degradation in series resistance is observed for the annealed device. A 3.7% and 2.8% photovoltaic conversion efficiency is observed on the devices fabricated on as-transferred and on annealed graphene respectively. The major limitation derives from the high sheet resistance of the as-transferred state-of-the-art material. The results opens the way to the use of graphene in applications that require transparent conducting layers resistant to high temperature pro- cessing.