The role of quantum dot (QD) decoration in the hole transport buffer layer and the photoactive medium on the photovoltaic parameters of thin film organic solar cells (TFOSCs) was investigated. A cadmium–tellurium-based QD was synthesized successfully and embedded in two of the functional layers of a TFOSC to improve its overall power conversion efficiency. The experimentally determined optimum concentration of the QD was maintained in the interfacial layer to investigate the effect of QD concentration in the active layer. The observed increased short-circuit current density (Jsc) and open circuit voltage (Voc) are attributable to the enhanced energy level tuning, broadened optical absorption, and charge transport process facilitated by the integration of QDs inside the media. Moreover, an improved device efficiency was obtained when the solvent additive was introduced into the bulk heterojunction photoactive layer films to facilitate QD dispersion and increase the interpenetrating network of the active layer blend that reduces the occurrence of trap sites, which, in turn, limits the Auger recombination rates. The QD-doped TFOSCs catalyzed with solvent additives displayed an enhanced overall photovoltaic parameter, which is quite appreciable in comparison with that of the pristine devices.