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THz transient photoconductivity of the III–V dilute nitride GaP y As1−y−x N x

descriptionPublicationkeyboard_double_arrow_right Article , Preprint , Other literature type , Journal 26 Oct 2018Embargo end date: 01 Jan 2018 United States Publisher:IOP PublishingJournal:Semiconductor Science and Technology, volume 33, page 125,009 (issn: 0268-1242, eissn: 1361-6641,

Authors: Charles W. Tu; E. M. Weiss; Y. J. Kuang;

James Heyman; Wladek Walukiewicz;

Kin Man Yu; Kin Man Yu; +3 Authors

doi: 10.1088/1361-6641/aae7c5 , 10.48550/arxiv.1805.04043

arXiv: 1805.04043

THz transient photoconductivity of the III–V dilute nitride GaP y As1−y−x N x

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Abstract

THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bimolecular electron-hole recombination with recombination constant r = 3.2E-8 +/-0.8E-8 cm3/s. We discuss the implications for applications in solar energy.

12 pages, 4 figures

Country

United States

Related Organizations

University of California, San Diego
United States
Lawrence Berkeley National Laboratory
United States
University of California, Berkeley
United States
Lawrence Berkeley National Laboratory
United States
City University of Hong Kong
China (People's Republic of)

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Keywords

Condensed Matter - Materials Science, ultrafast, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Materials Engineering, Condensed Matter Physics, intermediate band, cond-mat.mtrl-sci, photovoltaic, terahertz, III-V N, Electrical and Electronic Engineering, Applied Physics

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