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Heterojunction Band Offset Limitations on Open-Circuit Voltage in <roman>p</roman>-Z<roman>n</roman>T <roman>e/n</roman>-Z<roman>n</roman>S<roman>e</roman> Solar Cells

descriptionPublicationkeyboard_double_arrow_right Article , Journal 01 May 2015 Spain Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Journal of Photovoltaics, volume 5, pages 874-877 (issn: 2156-3381, eissn: 2156-3403,

Authors: Teran, A.; Chen, C.; López, E.; Linares, P.G.; Artacho Huertas, Irene; Martí Vega, Antonio; Luque López, Antonio; +1 Authors

doi: 10.1109/jphotov.2015.2411057

Heterojunction Band Offset Limitations on Open-Circuit Voltage in <roman>p</roman>-Z<roman>n</roman>T <roman>e/n</roman>-Z<roman>n</roman>S<roman>e</roman> Solar Cells

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Abstract

Limitations on the open-circuit voltage of p-ZnTe/n-ZnSe heterojunction solar cells are studied via current-voltage (I-V) measurements under solar concentration and at variable temperature. The open-circuit voltage reaches a maximum value of 1.95 V at 77 K and 199 suns. The open-circuit voltage shows good agreement with the calculated built-in potential of 2.00 V at 77 K. These results suggest that the open-circuit voltage is limited by heterojunction band offsets associated with the type-II heterojunction band lineup, rather than the bandgap energy of the ZnTe absorber material.

Country

Spain

Related Organizations

University of Michigan–Flint
United States
Universidad Politécnica de Madrid
Spain

Keywords

Telecomunicaciones, Electrónica

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