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Interface Characterization of Single-Crystal CdTe Solar Cells With VOC > 950 mV

descriptionPublicationkeyboard_double_arrow_right Article , Journal 01 Nov 2016Publisher:Institute of Electrical and Electronics Engineers (IEEE)Journal:IEEE Journal of Photovoltaics, volume 6, pages 1,650-1,653 (issn: 2156-3381, eissn: 2156-3403,

Authors: Eric Colegrove; Kelvin G. Lynn; Ana Kanevce; Wyatt K. Metzger; Helio R. Moutinho; Darius Kuciauskas; Teresa M. Barnes; +9 Authors

doi: 10.1109/jphotov.2016.2598274

Interface Characterization of Single-Crystal CdTe Solar Cells With VOC > 950 mV

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Abstract

Advancing CdTe solar cell efficiency requires improving the open-circuit voltage $\rm{(V_{{\rm{OC}}})}$ above 900 mV. This requires long carrier lifetime, high hole density, and high-quality interfaces, where the interface recombination velocity is less than about 104 cm/s. Using CdTe single crystals as a model system, we report on CdTe/CdS electrical and structural interface properties in devices that produce open-circuit voltage exceeding 950 mV.

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