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MEMS-based thick film PZT vibrational energy harvester

descriptionPublicationkeyboard_double_arrow_right Conference object , Article 01 Jan 2011Publisher:IEEEJournal:2011 IEEE 24th International Conference on Micro Electro Mechanical Systems

Authors: Lei, Anders; Xu, Ruichao; Thyssen, Anders; Stoot, A C; Christiansen, T L; Hansen, K; Lou-Moller, R; +2 Authors

doi: 10.1109/memsys.2011.5734377

MEMS-based thick film PZT vibrational energy harvester

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Abstract

We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 µW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s−2) input acceleration at its resonant frequency of 235 Hz.

Related Organizations

Technical University of Denmark
Denmark

Keywords

Silicon, Micromechanical devices, Thick film devices, Etching, Energy harvesting, Microfabrication, Lead compounds, Silicon-on-insulator

Impact byBIP!

	citations This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	50
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Top 10%
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Top 10%
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Top 10%