In this work, the entire manufacturing process of electrostatic supercapacitors using the atomic layer deposition (ALD) technique combined with the employment of nanoporous anodic alumina templates as starting substrates is reported. The structure of a usual electrostatic capacitor, which comprises a top conductor electrode/the insulating dielectric layer/and bottom conductor electrode (C/D/C), has been reduced to nanoscale size by depositing layer by layer the required materials over patterned nanoporous anodic alumina membranes (NAAMs) by employing the ALD technique. A thin layer of aluminum-doped zinc oxide, with 3 nm in thickness, is used as both the top and bottom electrodes’ material. Two dielectric materials were tested; on the one hand, a triple-layer made by a successive combination of 3 nm each layers of silicon dioxide/titanium dioxide/silicon dioxide and on the other hand, a simple layer of alumina, both with 9 nm in total thickness. The electrical properties of these capacitors are studied, such as the impedance and capacitance dependences on the AC frequency regime (up to 10 MHz) or capacitance (180 nF/cm2) on the DC regime. High breakdown voltage values of 60 V along with low leakage currents (0.4 μA/cm2) are also measured from DC charge/discharge RC circuits to determine the main features of the capacitors behavior integrated in a real circuit.