Wide bandgap (Eg) perovskite solar cells (PSCs) are emerging as the preferred choice for top cells in a tandem architecture with crystalline silicon solar cells. Among the wide bandgap perovskites, a mixed cation mixed halide composition containing CsyFA1-yPbI3−xBrx is a popular choice because the presence of bromine widens the bandgap and addition of cesium stabilizes the crystal structure. These perovskite layers are commonly fabricated using one-step spin coating technique; however, sequential spin coating followed by dip coating has been successful in offering better control over the crystallization process for low bandgap absorber layers. In this paper, the fabrication of a Cs0.2FA0.8PbI3−xBrx perovskite absorber layer using the sequential deposition route is reported. The concentration of bromine was varied in the range 0 ≤ x ≤ 1 and optical, structural, and morphological properties of the films were studied. As the concentration was increased, the perovskite showed better crystallinity and the presence of large grains with high surface roughness, indicating the formation of the CsPbBr3 phase. Optically, the perovskite films exhibited higher absorbance in the ultraviolet (UV) range between 300 and 500 nm, hence up to x = 0.3 they can be profitably employed as a wide bandgap photon absorber layer in solar cell applications.