• Energy Research
• 2025-2025close
• physical sciences close
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AgNbO3-based antiferroelectric ceramics can be used to prepare dielectric ceramic materials with energy storage performance. However, their efficiency is much lower than that of relaxors, which is one of the biggest obstacles for their applications. To overcome this problem, AgNbO3 ceramics co-doped with Eu3+ and Ta5+ at the A- and B-sites were prepared in this work. The Ag0.97Eu0.01Nb0.85Ta0.15O3 sample has a Wr of 6.9 J/cm3 and an η of 74.6%. The ultrahigh energy storage density and efficiency of Ag0.97Eu0.01Nb0.85Ta0.15O3 has been ascribed to the synergistic effect of the increase in the breakdown electric field, the enhancement of antiferroelectric stability, the construction of multiphase coexistence, and the modification of the domain structure morphology. The Ag0.97Eu0.01Nb0.85Ta0.15O3 ceramic is expected to be one of the options for preparing dielectric capacitors.

AgNbO3-based antiferroelectric ceramics can be used to prepare dielectric ceramic materials with energy storage performance. However, their efficiency is much lower than that of relaxors, which is one of the biggest obstacles for their applications. To overcome this problem, AgNbO3 ceramics co-doped with Eu3+ and Ta5+ at the A- and B-sites were prepared in this work. The Ag0.97Eu0.01Nb0.85Ta0.15O3 sample has a Wr of 6.9 J/cm3 and an η of 74.6%. The ultrahigh energy storage density and efficiency of Ag0.97Eu0.01Nb0.85Ta0.15O3 has been ascribed to the synergistic effect of the increase in the breakdown electric field, the enhancement of antiferroelectric stability, the construction of multiphase coexistence, and the modification of the domain structure morphology. The Ag0.97Eu0.01Nb0.85Ta0.15O3 ceramic is expected to be one of the options for preparing dielectric capacitors.

Dielectric capacitors with ultrahigh power density and ultra-fast charge/discharge rate are highly desired in pulse power fields. Environmental-friendly AgNbO3 family have been actively studied for its large polarization and antiferroelectric nature, which greatly boost the electric energy storage performance. However, high-quality AgNbO3-based films are difficult to fabricate, leading to a low breakdown field Eb (<1.2 MV/cm) and consequently arising inferior energy storage performance. In this work, we propose an interface engineering strategy to mitigate the breakdown field issue. A Ag(Nb,Ta)O3/BaTiO3 bilayer film is proposed, where the BaTiO3 layer acts as a p-type semiconductor while Ag(Nb,Ta)O3 layer is n-type, together with the n-type LaNiO3 buffer layer on the substrate, forming an n-p-n heterostructure. The n-p-n heterostructure elevates the potential barriers for charge transport, greatly reducing the leakage current. An extremely large breakdown field Eb∼4.3 MV/cm is achieved, being the highest value up to date in the niobate system. A high recoverable energy density Wrec∼62.3 J/cm3 and a decent efficiency η∼72.3% are obtained, much superior to that of the Ag(Nb,Ta)O3 monolayer film (Wrec∼46.4 J/cm3 and η∼80.3% at Eb∼3.3 MV/cm). Our results indicate that interface engineering is an effective method to boost energy storage performance of dielectric film capacitors.

Dielectric capacitors with ultrahigh power density and ultra-fast charge/discharge rate are highly desired in pulse power fields. Environmental-friendly AgNbO3 family have been actively studied for its large polarization and antiferroelectric nature, which greatly boost the electric energy storage performance. However, high-quality AgNbO3-based films are difficult to fabricate, leading to a low breakdown field Eb (<1.2 MV/cm) and consequently arising inferior energy storage performance. In this work, we propose an interface engineering strategy to mitigate the breakdown field issue. A Ag(Nb,Ta)O3/BaTiO3 bilayer film is proposed, where the BaTiO3 layer acts as a p-type semiconductor while Ag(Nb,Ta)O3 layer is n-type, together with the n-type LaNiO3 buffer layer on the substrate, forming an n-p-n heterostructure. The n-p-n heterostructure elevates the potential barriers for charge transport, greatly reducing the leakage current. An extremely large breakdown field Eb∼4.3 MV/cm is achieved, being the highest value up to date in the niobate system. A high recoverable energy density Wrec∼62.3 J/cm3 and a decent efficiency η∼72.3% are obtained, much superior to that of the Ag(Nb,Ta)O3 monolayer film (Wrec∼46.4 J/cm3 and η∼80.3% at Eb∼3.3 MV/cm). Our results indicate that interface engineering is an effective method to boost energy storage performance of dielectric film capacitors.