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The optical and photovoltaic properties of Si NCs / SiC multilayers (MLs) are investigated using a membrane-based solar cell structure. By removing the Si substrate in the active cell area, the MLs are studied without any bulk Si substrate contribution. The occurrence is confirmed by scanning electron microscopy and light-beam induced current mapping . Optical characterization combined with simulations allows us to determine the absorption within the ML absorber layer, isolated from the other cell stack layers. The results indicate that the absorption at wavelengths longer than 800 nm is only due to the SiC matrix. The measured short-circuit current is significantly lower than that theoretically obtained from absorption within the ML absorber, which is ascribed to losses that limit carrier extraction. The origin of these losses is discussed in terms of the material regions where recombination takes place. Our results indicate that carrier extraction is most efficient from the Si NCs themselves, whereas recombination is strongest in SiC and residual a-Si domains . Together with the observed onset of the external quantum efficiency (EQE) at 700-800 nm, this fact is an evidence of quantum confinement in Si NCs embedded in SiC on device level.

The optical and photovoltaic properties of Si NCs / SiC multilayers (MLs) are investigated using a membrane-based solar cell structure. By removing the Si substrate in the active cell area, the MLs are studied without any bulk Si substrate contribution. The occurrence is confirmed by scanning electron microscopy and light-beam induced current mapping . Optical characterization combined with simulations allows us to determine the absorption within the ML absorber layer, isolated from the other cell stack layers. The results indicate that the absorption at wavelengths longer than 800 nm is only due to the SiC matrix. The measured short-circuit current is significantly lower than that theoretically obtained from absorption within the ML absorber, which is ascribed to losses that limit carrier extraction. The origin of these losses is discussed in terms of the material regions where recombination takes place. Our results indicate that carrier extraction is most efficient from the Si NCs themselves, whereas recombination is strongest in SiC and residual a-Si domains . Together with the observed onset of the external quantum efficiency (EQE) at 700-800 nm, this fact is an evidence of quantum confinement in Si NCs embedded in SiC on device level.

Abstract Latest trends in the photovoltaic sector see the use of innovative photovoltaic technologies with extended spectral responsivity ranging from 300 to 1200 nm for non-concentrating terrestrial applications, and to 1800 nm for concentrating PV and space applications. As a consequence, an update of the IEC 60904-9 standard is ongoing with a definition of new spectral ranges for the assessment of the spectral match. This poses new challenges to laboratories and research centers on whether or not they still are able to accurately measure the spectral mismatch of their sun simulator in the newly-defined spectral regions. Prior to that, there is a need to understand if the commercially available spectroradiometers are ready to extend their measurement range as prescribed by the forthcoming new standard. This paper analyses two options for an extension of the spectrum characterisation of solar simulators to 300–1200 nm and compares them in terms of spectral match of global normal irradiance (GNI) spectra acquired under natural sunlight by eight spectroradiometers during the 6th European Spectroradiometer Intercomparison. The acquired spectra are also compared in terms of an index of consistency of the spread of the measured spectra with the estimated measurement uncertainty, hereafter named as performance statistics E n . Results show that all investigated laboratories assure the equivalence of the spectral match classification well below the 25% limit corresponding to class-A simulators. When considering the more stringent class-A+ corresponding to a 12.5% limit, one of the two considered options that rearranges the 300–1200 nm spectral range into 6 bands appears to still assure the equivalence of the class A+ limits among considered instruments. The E n performance index analysis highlights some inconsistencies with the estimated measurement uncertainty or instrument drifts from the expected performance, and the need of further improvements in calibration, set up and measurement procedures.

Abstract Latest trends in the photovoltaic sector see the use of innovative photovoltaic technologies with extended spectral responsivity ranging from 300 to 1200 nm for non-concentrating terrestrial applications, and to 1800 nm for concentrating PV and space applications. As a consequence, an update of the IEC 60904-9 standard is ongoing with a definition of new spectral ranges for the assessment of the spectral match. This poses new challenges to laboratories and research centers on whether or not they still are able to accurately measure the spectral mismatch of their sun simulator in the newly-defined spectral regions. Prior to that, there is a need to understand if the commercially available spectroradiometers are ready to extend their measurement range as prescribed by the forthcoming new standard. This paper analyses two options for an extension of the spectrum characterisation of solar simulators to 300–1200 nm and compares them in terms of spectral match of global normal irradiance (GNI) spectra acquired under natural sunlight by eight spectroradiometers during the 6th European Spectroradiometer Intercomparison. The acquired spectra are also compared in terms of an index of consistency of the spread of the measured spectra with the estimated measurement uncertainty, hereafter named as performance statistics E n . Results show that all investigated laboratories assure the equivalence of the spectral match classification well below the 25% limit corresponding to class-A simulators. When considering the more stringent class-A+ corresponding to a 12.5% limit, one of the two considered options that rearranges the 300–1200 nm spectral range into 6 bands appears to still assure the equivalence of the class A+ limits among considered instruments. The E n performance index analysis highlights some inconsistencies with the estimated measurement uncertainty or instrument drifts from the expected performance, and the need of further improvements in calibration, set up and measurement procedures.

The use of graphene as transparent conducting layer in devices that require high temperature processing is proposed. The material shows stability upon thermal treatments up to 1100 °C ifc apped with a sacrificial silicon layer. The use of Cu foil or evaporated Cu as catalysts in Catalytic-Chemical Vapor Deposition growth gives rise to graphene ofs imilar properties, which represents a promising result in view of its direct integration in microelectronic devices. Photovoltaic p-i-n thin film devices were fab- ricated on the as-deposited or annealed graphene membranes and compared with similar devices that incorporate as-deposited Indium Tin Oxide. No degradation in series resistance is observed for the annealed device. A 3.7% and 2.8% photovoltaic conversion efficiency is observed on the devices fabricated on as-transferred and on annealed graphene respectively. The major limitation derives from the high sheet resistance of the as-transferred state-of-the-art material. The results opens the way to the use of graphene in applications that require transparent conducting layers resistant to high temperature pro- cessing.

The use of graphene as transparent conducting layer in devices that require high temperature processing is proposed. The material shows stability upon thermal treatments up to 1100 °C ifc apped with a sacrificial silicon layer. The use of Cu foil or evaporated Cu as catalysts in Catalytic-Chemical Vapor Deposition growth gives rise to graphene ofs imilar properties, which represents a promising result in view of its direct integration in microelectronic devices. Photovoltaic p-i-n thin film devices were fab- ricated on the as-deposited or annealed graphene membranes and compared with similar devices that incorporate as-deposited Indium Tin Oxide. No degradation in series resistance is observed for the annealed device. A 3.7% and 2.8% photovoltaic conversion efficiency is observed on the devices fabricated on as-transferred and on annealed graphene respectively. The major limitation derives from the high sheet resistance of the as-transferred state-of-the-art material. The results opens the way to the use of graphene in applications that require transparent conducting layers resistant to high temperature pro- cessing.

Silicon carbide/silicon rich carbide multilayers, aimed at the formation of silicon nanodots for photovoltaic applications, have been studied. The electrical properties have been investigated at the nano-scale by conductive Atomic Force Microscopy (c-AFM) and at macro-scale by temperature dependent conductivity measurements. The mixture is composed of highly conductive Si nanoclusters and moderately conductive SiC nanoclusters in a disordered matrix. The conduction mechanism takes place via band states induced by the disorder at the interface between nanodot clusters. Structural properties have been extracted by optical spectroscopy analyses. The results contribute to the understanding of the microscopical electronic mechanisms of the composite material, which is a candidate for third generation photovoltaics.

Silicon carbide/silicon rich carbide multilayers, aimed at the formation of silicon nanodots for photovoltaic applications, have been studied. The electrical properties have been investigated at the nano-scale by conductive Atomic Force Microscopy (c-AFM) and at macro-scale by temperature dependent conductivity measurements. The mixture is composed of highly conductive Si nanoclusters and moderately conductive SiC nanoclusters in a disordered matrix. The conduction mechanism takes place via band states induced by the disorder at the interface between nanodot clusters. Structural properties have been extracted by optical spectroscopy analyses. The results contribute to the understanding of the microscopical electronic mechanisms of the composite material, which is a candidate for third generation photovoltaics.