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AbstractThis paper presents an experimental assessment of a blended fatigue‐extreme controller for load control employing trailing edge flaps on a lab‐scale wind turbine. The controller blends between a repetitive model predictive controller that targets fatigue loads and a dedicated extreme load controller, which consists of a simple on‐off load control strategy. The Fatigue controller uses the flapwise blade root bending moments of the three blades as input sensors. The Extreme controller additionally uses on‐blade angle of attack and velocity measurements as well as acceleration measurements to detect extreme events and to allow for a fast reaction. The experiments are conducted on the Berlin Research Turbine within the large wind tunnel of the TU Berlin. In order to reproduce test cases with deterministic extreme wind conditions that follow industry standards, the wind tunnel was redesigned. The analyzed test cases are extreme direction change, extreme coherent gust, extreme operating gust and extreme coherent gust with direction change. The test cases are analyzed by on‐blade angle of attack and velocity measurements. The load control performance of the Blended controller is compared to the pure fatigue oriented and the pure extreme load controller. The Blended controller achieves a maximum flapwise blade root bending moment reduction of 23%, which is comparable to the reduction achieved by the Extreme controller.

In the search for a nontoxic replacement of the commonly employed CdS buffer layer for Cu(In,Ga)(S,Se) $_\mathrm{2}$ based solar cells, chemically deposited Zn(O,S) thin films are a most promising choice. In this paper, we address the usually slow deposition speed of Zn(O,S) in a newly developed ammonia-free chemical bath process, resulting in a deposition of 30 nm in 3 min with good homogeneity on 30 cm × 30 cm sized substrates. Solar cells with buffer layers prepared from this process match the efficiency of CdS reference cells. In a second step, we address the light-soaking post-treatment, still needed for maximum efficiencies. By addition of aluminum to the deposition process, the initial efficiencies can be increased slightly. With the addition of boron, the light-soaking post-treatment is rendered unnecessary, while maintaining high efficiencies above 15%, surpassing reference cells with CdS buffer.

Abstract This paper presents a comparison of commercially used German and Russian reactor pressure vessel steels from the positron annihilation spectroscopy (PAS) point of view, having in mind knowledge obtained also from other techniques from the last decades. The second generations of Russian RPV steels seems to be fully comparable with German steels and their quality enables prolongation of NPP operating lifetime over projected 40 years. The embrittlement of CrMoV steel is very low due to the dynamic recovery of radiation-induced defects at reactor operating temperatures.

Silicon heterojunction solar cells use crystalline silicon (c-Si) wafers as optical absorbers and employ bilayers of doped/intrinsic hydrogenated amorphous silicon (a-Si:H) to form passivating contacts. Recently, we demonstrated that such solar cells increase their operating voltages and thus their conversion efficiencies during light exposure. We found that this performance increase is due to improved passivation of the a-Si:H/c-Si interface and is induced by injected charge carriers (either by light soaking or forward-voltage biasing of the device). Here, we discuss this counterintuitive behavior and establish that: (i) the performance increase is observed in solar cells as well as modules; (ii) this phenomenon requires the presence of doped a-Si:H films, but is independent from whether light is incident from the a-Si:H(p) or the a-Si:H(n) side; (iii) UV and blue photons do not play a role in this effect; (iv) the performance increase can be observed under illumination intensities as low as 20 W m(-1) (0.02-sun) and appears to be almost identical in strength when under 1-sun (1000 W m(-1)); (v) the underlying physical mechanism likely differs from annealing-induced surface passivation.

This article investigates the impact of the back-surface-field (BSF) thickness variation within a local aluminum contact on the performance of passivated emitter and rear contact solar cells. A significant difference of BSF thickness between contact endings and the center of dash-shaped contacts is verified experimentally by a comprehensive statistical analysis using scanning electron microscopy. The impact of local BSF thickness differences on the cell performance is studied with 3-D technology computer-aided design (TCAD) device simulations. Several device parameters such as BSF thicknesses, the doping concentration in the BSF profile at rear contacts, or the metallized area fraction at the cell rear side are varied. Our simulation study shows that the open-circuit voltage is mainly affected by locally reduced BSF thicknesses, resulting in an efficiency loss up to 0.14%abs or 0.84%abs, respectively, if an area fraction of 1% or 20% within a local contact has reduced BSF thicknesses. This effect can be minimized either by reducing the metallized area fraction at the cell rear side or by increasing the doping concentration in the BSF profile at aluminum rear contacts. In addition, we demonstrate that the 3-D simulations can be approximated with 2-D simulations by applying a single doping profile with an average BSF thickness, calculated with the harmonic mean.

Abstract: The paper presents the results of the study on luminescence and electronic excitations in Li6Gd(BO3)3 single crystals. The optical and luminescence spectroscopy with a sub-nanosecond time resolution upon selective photoexcitation in the energy range from 3.0 to 650 eV was used to investigate in detail the luminescence of both the Gd3þ host ions and Ce3þ impurity ions as well as the processes of energy transfer between them. The intrinsic ultraviolet emission at 3.95–3.97 eV due to 6Pj-8S7=2 transitions in the Gd3þ host ion and the fast luminescence at 2.8–3.0 eV due to 5d-4f1 dipole-allowed transitions in the Ce3þ impurity ion were studied upon excitations hrough the intracenter, charge transfer, bandto-band, and inner-shell transitions. The specificity of the energy transfer upon excitation of photoluminescence in the energy range of absorption of the inner shells of different atoms of the crystal, as well as in the energy region of the giant resonance of 4d–4f transitions was revealed. On the basis of the experimental data, the bandgap Eg¼9.3 eV, the minimum energy of the 5d-4f1 and charge transfer transitions were determined. The expected positions of the ground states of the 4fn and 4fn15d levels of trivalent lanthanide ions as well as the 4fnþ1 and 4fn5d levels of divalent ions were calculated for all the lanthanide ions in Li6Gd(BO3)3 host crystal. Journal of luminescence 134, 113-125 (2013). doi:10.1016/j.jlumin.2012.09.002 Published by Elsevier, New York, NY [u.a.]

Abstract Many organizations in the world are interested in waste management problems and their potential solutions. In order to solve these problems, a Japanese venture company has developed an innovative thermal decomposer for organic wastes called ERCM (Earth-Resource-Ceramic-Machine). The ERCM reactor employs electron injected air to promote the thermal decomposition reaction, while the effect of electron injection into air has not yet been clarified. An experimental work was performed using a fixed bed reactor to explore the effects of different parameters of electron injection into air, the reaction temperature and different feedstock on the syngas generation. The main purpose of this study is to clarify the phenomena occurring in the ERCM reactor where a direct current electric field is produced in the flame reaction zone to enhance the thermal decomposition of wastes. In this regard, a mathematical model for simulating the thermal decomposition of solid waste in the presence of an electric field have been developed. The equations of aero-thermochemistry are coupled to the balance equations for densities of charged species, and the Poisson equation for the electrical potential is solved. The model was validated by the experimental data and showed a good agreement. The results showed that the electric field significantly improves the stabilization of the flame. From the release behavior of CO and CO2, it is noted that the electron injection would affect the char combustion process significantly. Finally the effect of the flame reaction zone generated by the field induced ion wind on the thermal decomposition was investigated.

Before lower purity, lower cost silicon (Si) materials, such as compensated Si, can play a role in the terawatt-level (TW) capacity of photovoltaics, a better understanding of the fundamental properties of impurities in compensated Si is essential. In this work, high-resolution photoluminescence (PL) has been used to study the charge carrier radiative recombination through Donor-Acceptor pairs (DAPs) in phosphorus (P) and gallium (Ga) co-doped Si material grown for solar cell applications. The high spectral resolution of our PL system, 0.06 meV, enables us to overcome hitherto prior issues of overlapping spectral lines, giving access to extremely fine structures associated with DA pair (DAP) recombination. Our results confirm the presence of three broad bands and a discrete line structure related to DAP luminescence. The comparison of the discrete line structure due to DAPs recombination in the PL spectra with the theoretically predicted one allows the accurate determination of the Ga ionization energy. Temperature-dependent PL is then used to understand the thermally-induced changes in the DAP luminescence. In particular, we observe that the radiative recombination channel remains active for distant DAPs up to ∼40 K, unlike that for close-range DAPs for which the radiative channel is quenched after only slight increases in the temperature range 10–25 K. Furthermore, the analysis of the temperature dependent changes in the PL intensity of the broad DAP bands up to ∼200 K is used to derive the ionization energy of P donors in compensated Si material. In light of this important information, the significance of using high resolution PL to analyse spectral features in compensated Si is demonstrated.