• Energy Research

L'efficacité de conversion d'une cellule solaire peut être sensiblement augmentée par des propriétés de matériau améliorées et des conceptions associées. Dans un premier temps, cette étude a adopté la technique de simulation AMPS-1D (analyse des structures microélectroniques et photoniques) pour concevoir et optimiser les paramètres de la cellule avant la fabrication, où les paramètres de conception optimaux peuvent être validés. Les cellules solaires à jonction unique à base de silicium amorphe hydrogéné (a-Si :H) ont été analysées à l'aide du simulateur AMPS-1D. L'enquête a été effectuée sur la base de paramètres de modèle importants tels que l'épaisseur, les concentrations de dopage, la bande interdite et la température de fonctionnement, etc. L'efficacité de la jonction unique a-Si :H peut être atteinte jusqu'à plus de 19 % après optimisation paramétrique dans la simulation, ce qui peut sembler irréaliste avec les technologies actuellement disponibles. Par conséquent, les cellules solaires a-SiC :H/a-SiC : H-buffer/a-Si : H/a-Si :H conçues et optimisées numériquement ont été fabriquées en utilisant le PECVD (dépôt chimique en phase vapeur assisté par plasma), où la meilleure efficacité de conversion initiale de 10,02 % a été atteinte ( V, mA/cm2 et ) pour une cellule de petite surface (0,086 cm2). La caractéristique d'efficacité quantique (QE) montre la meilleure réponse spectrale de la cellule dans la gamme de longueurs d'onde de 400 nm à 650 nm, ce qui prouve qu'elle est un candidat potentiel en tant que cellule moyenne dans les structures multijonctions à base de a-Si. La eficiencia de conversión de una célula solar se puede aumentar sustancialmente mediante la mejora de las propiedades del material y los diseños asociados. Al principio, este estudio ha adoptado la técnica de simulación AMPS-1D (análisis de estructuras microelectrónicas y fotónicas) para diseñar y optimizar los parámetros de la celda antes de la fabricación, donde se pueden validar los parámetros de diseño óptimos. Se han analizado células solares de unión única basadas en silicio amorfo hidrogenado (a-Si:H) utilizando el simulador AMPS-1D. La investigación se ha realizado en función de parámetros importantes del modelo, como el espesor, las concentraciones de dopaje, la banda prohibida y la temperatura de funcionamiento, etc. La eficiencia de la unión simple a-Si:H se puede lograr hasta más del 19% después de la optimización paramétrica en la simulación, lo que puede parecer poco realista con las tecnologías disponibles actualmente. Por lo tanto, las células solares a-SiC:H/a-SiC: H-buffer/a-Si:H/a-Si:H diseñadas y optimizadas numéricamente se han fabricado utilizando PECVD (deposición química de vapor mejorada con plasma), donde se ha logrado la mejor eficiencia de conversión inicial de 10.02% ( V, mA/cm2 y ) para una célula de área pequeña (0.086 cm2). La característica de eficiencia cuántica (QE) muestra la mejor respuesta espectral de la célula en el rango de longitud de onda de 400 nm–650 nm, lo que demuestra que es un candidato potencial como célula media en estructuras multiunión basadas en a-Si. The conversion efficiency of a solar cell can substantially be increased by improved material properties and associated designs. At first, this study has adopted AMPS-1D (analysis of microelectronic and photonic structures) simulation technique to design and optimize the cell parameters prior to fabrication, where the optimum design parameters can be validated. Solar cells of single junction based on hydrogenated amorphous silicon (a-Si:H) have been analyzed by using AMPS-1D simulator. The investigation has been made based on important model parameters such as thickness, doping concentrations, bandgap, and operating temperature and so forth. The efficiency of single junction a-Si:H can be achieved as high as over 19% after parametric optimization in the simulation, which might seem unrealistic with presently available technologies. Therefore, the numerically designed and optimized a-SiC:H/a-SiC:H-buffer/a-Si:H/a-Si:H solar cells have been fabricated by using PECVD (plasma-enhanced chemical vapor deposition), where the best initial conversion efficiency of 10.02% has been achieved ( V, mA/cm2 and ) for a small area cell (0.086 cm2). The quantum efficiency (QE) characteristic shows the cell’s better spectral response in the wavelength range of 400 nm–650 nm, which proves it to be a potential candidate as the middle cell in a-Si-based multijunction structures. يمكن زيادة كفاءة تحويل الخلية الشمسية بشكل كبير من خلال تحسين خصائص المواد والتصاميم المرتبطة بها. في البداية، اعتمدت هذه الدراسة تقنية محاكاة AMPS -1D (تحليل الهياكل الإلكترونية الدقيقة والفوتونية) لتصميم وتحسين معلمات الخلية قبل التصنيع، حيث يمكن التحقق من معلمات التصميم المثلى. تم تحليل الخلايا الشمسية ذات الوصلة الواحدة القائمة على السيليكون غير المتبلور المهدرج (a - Si:H) باستخدام محاكي AMPS -1D. تم إجراء التحقيق بناءً على معلمات النموذج المهمة مثل السُمك وتركيزات المنشطات والفجوة النطاقية ودرجة حرارة التشغيل وما إلى ذلك. يمكن تحقيق كفاءة الوصلة المفردة a - Si:H بنسبة تزيد عن 19 ٪ بعد التحسين البارامتري في المحاكاة، والذي قد يبدو غير واقعي مع التقنيات المتاحة حاليًا. لذلك، تم تصنيع الخلايا الشمسية a - SiC:H/a - SiC:H - buffer/a - Si:H/a - Si: H المصممة والمحسنة عدديًا باستخدام PECVD (ترسيب البخار الكيميائي المحسن بالبلازما)، حيث تم تحقيق أفضل كفاءة تحويل أولية بنسبة 10.02 ٪ ( V، mA/cm2 و ) لخلية صغيرة المساحة (0.086 سم2). تُظهر خاصية الكفاءة الكمية (QE) استجابة طيفية أفضل للخلية في نطاق الطول الموجي 400 نانومتر - 650 نانومتر، مما يثبت أنها مرشحة محتملة كخلية وسطى في الهياكل متعددة الوصلات القائمة على a - Si.

The reliability of photovoltaic (PV) modules operating under various weather conditions attracts the manufacturer’s concern since several studies reveal a degradation rate higher than 0.8% per year for the silicon-based technology and reached up to 2.76% per year in a harsh climate. The lifetime of the PV modules is decreased because of numerous degradation modes. Electromigration and delamination are two failure modes that play a significant role in PV modules’ output power losses. The correlations of these two phenomena are not sufficiently explained and understood like other failures such as corrosion and potential-induced degradation. Therefore, in this review, we attempt to elaborate on the correlation and the influence of delamination and electromigration on PV module components such as metallization and organic materials to ensure the reliability of the PV modules. Moreover, the effects, causes, and the sites that tend to face these failures, particularly the silicon solar cells, are explained in detail. Elsewhere, the factors of aging vary as the temperature and humidity change from one country to another. Hence, accelerated tests and the standards used to perform the aging test for PV modules have been covered in this review.

Abstract In this study, the effects of transition metal dichalcogenide, MoS2 interfacial layer formation between the Cu2ZnSnS4 (CZTS) absorber layer and Mo back contact in a conventional CZTS thin film solar cell (TFSC) structure have been studied by numerical simulation using wxAMPS-1D software. The goal of this study is to elucidate the effects of both n and p-type MoS2 on the overall CZTS solar cell’s performance from the viewpoint of metal-semiconductor junction and heterojunction band alignment. Interestingly, CZTS device, regardless of p or n-type MoS2 largely outperforms device without any MoS2 due to lower back contact barrier value. Significant transition in efficiency is noticed when acceptor (increases efficiency) or donor (decreases efficiency) concentration has a transition from 1016 cm−3 to higher concentration of 1018 cm−3 or more. Also, effect of variable electron affinity and band gap of MoS2 has been discussed from band alignment perspective. Generally, MoS2 layer with lower electron affinity and band gap is preferred to induce desirable band alignment and subsequently result in higher efficiency. All-in all, the formation of p-type MoS2 in CZTS solar cells can be tuned to improve the cell performance mainly by doping with higher acceptor doping concentration and limiting layer thickness. However, the detrimental effect of n-MoS2 can be prevented by maintaining thinner layer in the vicinity of ∼30 nm with low to moderate donor doping (

Abstract In this present work, we report a novel fabrication technique of ternary Cu2SnS3 (CTS) thin films by sulphurization of sequentially sputtered Sn/CuSn (elemental/alloy) stacked metallic precursors. The focal aim of our investigation is on the impact of metallic precursors’ Cu/Sn ratio on the overall material properties of CTS films, which in turn, influence the photovoltaic device performance. All CTSs exhibited polycrystalline films with a mixture monoclinic CTS and orthorhombic SnS compound, p-type conductivity, and optical band gap in the range of 0.84–0.90 eV. Metallic precursor with Cu/Sn ratio of 1.09 produced optimum CTS film with post-sulphurization Cu/Sn ratio of 1.98 and highest conversion efficiency of 0.71%, respectively, despite exhibiting pronounced formation of SnS secondary phase. The correlation between XRD, Raman, and SEM-EDX outcomes revealed that CTS films from metallic precursors with Cu/Sn ratio higher than 1.09 undergo severe microstructural degradation due to Sn-loss through decomposition of volatile SnS phase and consequently, resulted in poorer absorber layer quality and lower device performance. Finally, several efficiency impeding factors are discussed and practical propostions to overcome them are presented.

Abstract Thermoelectric technology is a promising solution to recover waste heat from different resources. There are numerous researches in the literature that measure performance of thermoelectric modules (TEMs). A comprehensive review of research studies that classifies and expounds disparities between various thermoelectric power generation (TEPG) systems is still unavailable and therefore, this paper reviews major concerns on their designs and performances. Firstly, various main elements of TEPG systems, which affect the output power of TEMs such as stabilizer or heat exchanger, interface, contact pressure, insulation, cooling system, and integrity are studied. Secondly, performances of test rigs and various prototypes are reviewed in detail based on their cooling methods since cooling is the most prominent factor among other counterparts. In general, the cooling unit is divided into either passive or active cooling system, which is selected based on its well-defined use. A comprehensive study on various test rigs with active cooling systems is given while a broader range in prototypes is covered and classified under detailed surveys. This review is expected to be of value for researchers in the field of thermoelectric. Overall, in order to have a prospective future towards commercialization of TEPG systems, the existing prototypes in the literature are still subjected to many enhancements in their design aspects, while further improvements are needed to be achieved independently in TEMs’ development.