• Energy Research
• Embargo close
• EU close
• SDSN Greece close

Silicon carbide/silicon rich carbide multilayers, aimed at the formation of silicon nanodots for photovoltaic applications, have been studied. The electrical properties have been investigated at the nano-scale by conductive Atomic Force Microscopy (c-AFM) and at macro-scale by temperature dependent conductivity measurements. The mixture is composed of highly conductive Si nanoclusters and moderately conductive SiC nanoclusters in a disordered matrix. The conduction mechanism takes place via band states induced by the disorder at the interface between nanodot clusters. Structural properties have been extracted by optical spectroscopy analyses. The results contribute to the understanding of the microscopical electronic mechanisms of the composite material, which is a candidate for third generation photovoltaics.

Abstract The effect of high temperatures as a degrading factor of rock materials is investigated in this study. Valdieri Marble samples, collected in a quarry in North-western Italian Alps, were subjected to thermal cycles (ranging from 105° to 600 °C) and to subsequent non-destructive and destructive laboratory tests with the aim of evaluating the variation of physical and mechanical properties as a function of temperature variations. Physical and mechanical measurements were complemented with microscopic observations on thin sections. The increase of crack density with temperature and the consequent porosity increases were found to be the main causes of degradation of physical and mechanical properties. In general, density, ultrasonic pulse velocity, wet electrical resistivity, uniaxial compressive strength and Young's moduli decrease as temperature increases. By contrast, peak strain and porosity increase. Correlations between temperature and physical-mechanical properties were proposed and compared to other relationships already established in scientific literature. A damage parameter to quantify the degradation of mechanical properties with temperature is also proposed.

The optical and photovoltaic properties of Si NCs / SiC multilayers (MLs) are investigated using a membrane-based solar cell structure. By removing the Si substrate in the active cell area, the MLs are studied without any bulk Si substrate contribution. The occurrence is confirmed by scanning electron microscopy and light-beam induced current mapping . Optical characterization combined with simulations allows us to determine the absorption within the ML absorber layer, isolated from the other cell stack layers. The results indicate that the absorption at wavelengths longer than 800 nm is only due to the SiC matrix. The measured short-circuit current is significantly lower than that theoretically obtained from absorption within the ML absorber, which is ascribed to losses that limit carrier extraction. The origin of these losses is discussed in terms of the material regions where recombination takes place. Our results indicate that carrier extraction is most efficient from the Si NCs themselves, whereas recombination is strongest in SiC and residual a-Si domains . Together with the observed onset of the external quantum efficiency (EQE) at 700-800 nm, this fact is an evidence of quantum confinement in Si NCs embedded in SiC on device level.

The use of graphene as transparent conducting layer in devices that require high temperature processing is proposed. The material shows stability upon thermal treatments up to 1100 °C ifc apped with a sacrificial silicon layer. The use of Cu foil or evaporated Cu as catalysts in Catalytic-Chemical Vapor Deposition growth gives rise to graphene ofs imilar properties, which represents a promising result in view of its direct integration in microelectronic devices. Photovoltaic p-i-n thin film devices were fab- ricated on the as-deposited or annealed graphene membranes and compared with similar devices that incorporate as-deposited Indium Tin Oxide. No degradation in series resistance is observed for the annealed device. A 3.7% and 2.8% photovoltaic conversion efficiency is observed on the devices fabricated on as-transferred and on annealed graphene respectively. The major limitation derives from the high sheet resistance of the as-transferred state-of-the-art material. The results opens the way to the use of graphene in applications that require transparent conducting layers resistant to high temperature pro- cessing.