• Energy Research

Intelligent tire concept constitutes one of the approaches to increase the accuracy of active safety systems in vehicle technology. The possibility of detecting tire–road interactions instantaneously has made these systems one of the most important research areas in automotive engineering. This study introduces the use of cost-effective flex and polyvinylidene fluoride strain sensors to estimate some dynamic tire features in free-rolling and real working conditions. The proposed solution combines a microcontroller-based readout circuit for the two sensors with a wireless data transmission system. A suitable prototype was realized and first experimental tests were conducted, in the laboratory as well as on the road. The energy consumption of the wireless monitoring system was optimized. Simulated and experimental results validate the proposed solution.

A contactless, all-optical and non-destructive technique for simultaneous measurement of minority carrier recombination lifetime and surface recombination velocity, at low injection level, in multi-crystalline silicon samples is presented. Being contactless and non-destructive with respect to the surface to be analyzed, the method does not need any surface treatment to be applied and therefore is suitable for routine lifetime characterization in solar cell fabrication processes.

In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon carbide MOSFET power module. The approach is based on a full circuital representation of the module, where use is made of the thermal equivalent of the Ohm’s law. The individual transistors are described with subcircuits, while the dynamic power-temperature feedback is accounted for through an equivalent thermal network enriched with controlled sources enabling nonlinear thermal effects. A synchronous step-up DC-DC converter and a single-phase inverter, both incorporating the aforementioned power module, are simulated. Good accuracy was ensured by considering electromagnetic effects due to parasitics, which were experimentally extracted in a preliminary stage. Low CPU times are needed, and no convergence issues are encountered in spite of the high switching frequencies. The impact of some key parameters is effortlessly quantified. The analysis witnesses the efficiency and versatility of the approach, and suggests its adoption for design, analysis, and synthesis of high-frequency power converters in wide-band-gap semiconductor technology.

This paper presents the design of an energy harvesting interface for multiple piezoelectric elements. The latter is targeted to be integrated in an air spring to convert the mechanical energy in electrical one usable to power a wireless sensor node. Modelling of the energy harvesting electronic circuit has been performed to optimize the management of the multiple signals provided by the piezoelectric elements in function of a variable electrical load. An experimental activity has been conducted to validate the circuit design and the tests results demonstrate a good agreement with the numerical ones, confirming the effectiveness of the proposed interface.

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy during avalanche breakdown. Avalanche energy (EAV) is an important figure of merit for all applications requiring load dumping and/or to benefit from snubber-less converter design. 2D TCAD electro-thermal simulations were performed to get important insight into the failure mechanism of SiC power MOSFETs during avalanche breakdown.

In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of devices. Successively, the possibility of using the gate current as a temperature-sensitive parameter and its monitoring during real circuit operation is proposed. The viability of monitoring the gate current without introducing additional complexity in the gate driver is examined through experimental measurements on commercially available p-GaN HEMTs.